Industrial

This datasheet is about CS51021A/2A/3A/4A fixed frequency PWM current mode controller, which provides all necessary features required for AC-DC or DC-DC primary side control. The family includes several features to eliminate the additional components needed to implement them externally. In addition to low start-up current (75µA) and high frequency operation capability, the CS51021A/2A/3A/4A family includes overvoltage and undervoltage monitoring, externally programmable dual threshold overcurrent protection, current sense leading edge blanking, current slope compensation, accurate duty cycle control and an externally available 5.0 V reference. The CS51021A and CS51023A feature bidirectional synchronization capability, while the CS51022A and CS51024A offer a sleep mode with 100µA maximum IC current consumption. The CS51021A/2A/3A/4A family is available in a 16 lead narrow body SO package.

This document describes the features and characteristics of the FQA9N90_F109 900V N-Channel MOSFET, including parameters such as current, voltage, and switching speed.

The document introduces CS51021/22/23/24 series fixed frequency PWM current mode controller, which has low startup current (75µA), high frequency operation capability, overvoltage and undervoltage monitoring, programmable dual threshold overcurrent protection, current sense leading edge blanking, current slope compensation, accurate duty cycle control and an externally available 5V reference. The series controller has bidirectional synchronization function, CS51021 and CS51023 provide sleep mode, with maximum IC current consumption of 100µA. The series controller uses a 16-lead narrow body SO package.

FQA90N15_F109 is a N-channel enhancement mode power field effect transistor produced by Fairchild. The device features RDS(on) = 0.018Ω @VGS = 10 V, low gate charge (typical 220nC), low Crss (typical 200pF), fast switching, 100% avalanche tested, improved dv/dt capability, 175°C maximum junction temperature rating, and RoHS compliance.

This document describes the features and characteristics of FQH90N15 / FQA90N15 N-Channel Power MOSFET, including 90A current, 150V voltage, low RDS(on) value, low gate charge and Crss value, fast switching speed, 100% avalanche tested, improved dv/dt capability, etc.

FQA90N08 is a 80V N-channel MOSFET with low on-state resistance, high switching speed, 100% avalanche tested and improved dv/dt capability.

This document describes the features of the FQA8N90C_F109 900V N-Channel MOSFET, including 8A current, 1.9Ω RDS(on), low gate charge, fast switching, etc.

The FQA8N100C 1000V N-Channel MOSFET is a low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability MOSFET.

This document describes the features and characteristics of the FQA7N80C_F109 800V N-Channel MOSFET, including low gate charge, fast switching, and improved dv/dt capability.

The CS5253B-1 is a 3.0 A LDO 5-Pin Adjustable Linear Regulator with Remote Sense Applications. It is a new very low dropout linear regulator that reduces total power dissipation in the application.

The document introduces QFET, a novel power device for power electronic systems. QFET has the advantages of high switching speed, low on-resistance, high breakdown voltage and wide bandgap, which makes it promising for wide application in power electronic systems.

2N7091 is a P-channel enhancement mode transistor in TO-257AB hermetic package. It has simple drive requirements and is suitable for high reliability applications.

This document describes the features and characteristics of the FQA70N10 N-Channel MOSFET product produced by Fairchild Semiconductor International. These products are made using advanced DMOS technology, which offers low on-state resistance, superior switching performance, and the ability to withstand high energy pulses. They are suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.