Industrial

This document describes the features and characteristics of the FQA6N90C_F109 900V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 6A current, 900V voltage, low gate charge and Crss, fast switching, 100% avalanche tested, and improved dv/dt capability.

This document describes the features and characteristics of Fairchild's FQA65N20 QFET TM FQA65N20 200V N-Channel MOSFET, including low on-state resistance, superior switching performance, and reliability under high energy pulses. These devices are suitable for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply, and motor control.

This document describes the features and characteristics of the 2N7085 model, including maximum operating voltage, maximum current, maximum power, etc.

FQA62N25C is a 250V N-channel MOSFET produced by Fairchild. Its features are RDS(on) = 0.035Ω @VGS = 10 V, low gate charge, low Crss, fast switching, 100% avalanche testing and improved dv/dt capability.

2N7081–220M–ISO is a N-channel power MOSFET produced by Semelab plc. Its features are TO–220 isolated hermetic package, low RDS(ON), and simple drive requirements.

This document mainly introduces the features and advantages of QFET QFET QFET QFET

FQA46N15 is a 150V N-channel MOSFET from Fairchild. Its features are RDS(on) = 0.042 Ω @VGS = 10 V, low gate charge (typ 85 nC), low Crss (typ 100pF), fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating

2N7052 / 2N7053 / NZT7053 is an NPN Darlington transistor designed for applications requiring extremely high gain and high breakdown voltage. It can handle collector currents up to 1.0A.

The document describes the features of QFET QFET QFET QFET, including brand, model, power, voltage and frequency

This document provides the absolute maximum ratings and electrical characteristics of the 2N7051 NPN epitaxial silicon transistor. It includes parameters such as collector-emitter voltage, collector-base voltage, emitter-base voltage, collector current, and storage temperature.

This document introduces the overview, main features and advantages of QFET, and provides application cases of QFET in communication networks and computer storage.

The FQA36P15 / FQA36P15_F109 150V P-Channel MOSFET is a high-efficiency, fast switching P-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. This device uses Fairchild's proprietary planar stripe DMOS technology to improve switching speed, reduce on-state resistance and withstand high energy pulses in the avalanche and commutation mode, while also improving dv/dt capability.

The FQA32N20C 200V N-Channel MOSFET is a Fairchild-produced enhancement mode N-channel power field-effect transistor that uses Fairchild's proprietary planar DMOS technology. It has a low on-state resistance, excellent switching performance, and a high energy pulse withstand capability. It is suitable for high-efficiency switching DC/DC converters and switch-mode power supplies.

This document describes the features of the CS5101A and CS5102A 16-bit, 100 kHz / 20 kHz A/D converters from Cirrus Logic, Inc. These converters have ultra-low distortion, fast conversion time, low linearity error, and self-calibration capabilities, making them suitable for battery-powered operation.

Supertex 2N7008 is a N-channel enhancement-mode vertical DMOS FET with high breakdown voltage, high input impedance, low input capacitance and fast switching speed. It is ideally suited for a wide range of switching and amplifying applications.