2N7002DW is a dual N-channel enhancement mode field effect transistor with features such as low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.
This document is a datasheet for the 2N7002DW, a dual N-channel enhancement mode field effect transistor (MOSFET) manufactured by Diodes Incorporated. The device is designed for low on-resistance applications and is packaged in the SOT-363 surface mount format. Key features include a low gate threshold voltage, low input capacitance, and fast switching speed.
| Drain-Source Voltage | 60 V |
|---|---|
| Package Type | SOT-363 |
| Continuous Drain Current | 115 mA |
| Total Power Dissipation | 200 mW |
| Operating Temperature Range | -55 to +150 °C |
| Gate Threshold Voltage | 1.0 to 2.0 V |
| Input Capacitance | 22 pF |
The maximum continuous drain current is 115 mA.
The maximum total power dissipation is 200 mW.
The operating and storage temperature range is -55 to +150 °C.