2N7002V/VA is a dual N-channel enhancement mode field effect transistor with low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage and ultra-small surface mount package
This document is a technical datasheet for the Diodes Incorporated 2N7002V and 2N7002VA, which are dual N-channel enhancement mode MOSFETs. The devices feature low on-resistance and ultra-small surface mount packaging in the SOT-563 case.
Key specifications include a drain-source voltage rating of 60 V, a continuous drain current of 280 mA, and a total power dissipation of 150 mW. The datasheet provides electrical characteristics such as input capacitance (max 50 pF), output capacitance (max 25 pF), and switching times, along with thermal resistance data and ordering information for tape and reel packaging.
| Total Power Dissipation | 150 mW |
|---|---|
| Thermal Resistance, Junction to Ambient | 833 °C/W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Input Capacitance (Max) | 50 pF |
| Output Capacitance (Max) | 25 pF |
The device uses an ultra-small surface mount SOT-563 case.
Yes, it is designed as Lead Free by Design and is RoHS Compliant.