The 2N7002V/VA is a dual N-channel enhancement mode field effect transistor with low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, ultra-small surface mount package and lead free by design/RoHS compliant features.
This document is a datasheet for the Diodes Incorporated 2N7002V/VA, a dual N-channel enhancement mode field effect transistor (MOSFET). The device features a low on-resistance and is packaged in the SOT-563 surface mount case. It is designed for applications requiring fast switching speeds and low input capacitance.
| Drain-Source Voltage | 60 V |
|---|---|
| Drain Current (Continuous) | 280 mA |
| Drain Current (Pulsed) | 15 A |
| Total Power Dissipation | 150 mW |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | SOT-563 |
| Input Capacitance | 50 pF |
| Turn-On Delay Time | 20 ns |
The maximum drain-source voltage is 60 V.
The device operates and stores between -55 and +150 °C.
No, the package is non-polarized.