2N7002W is an N-channel enhancement mode field-effect transistor featuring low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage and ultra-small surface mount package.
This document is a technical datasheet for the Diodes Incorporated 2N7002W N-channel enhancement mode field effect transistor. The device features low on-resistance, low gate threshold voltage, and fast switching speed in an ultra-small SOT-323 surface mount package.
| Drain-Source Voltage | 60 V |
|---|---|
| Package Type | SOT-323 |
| Continuous Drain Current (Ta = 25°C) | 1.5 A |
| Total Power Dissipation | 200 mW |
| Operating Temperature Range | -55 to +150 °C |
The maximum total power dissipation is 200 mW.
The device operates from -55 to +150 °C.