This document describes the features of the 2N7002W N-Channel Enhancement Mode Field Effect Transistor, including low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, etc.
This document is a technical datasheet for the Diodes Incorporated 2N7002W, an N-channel enhancement mode field effect transistor (FET). The device features a low on-resistance, low gate threshold voltage, and ultra-small surface mount SOT-323 packaging. It is designed for fast switching speed applications.
The datasheet provides detailed electrical characteristics including maximum ratings such as a drain-source voltage of 60V and continuous drain current up to 115mA at 25°C. It also includes dynamic characteristics like input capacitance, output capacitance, and reverse transfer capacitance, along with switching delay times under specific test conditions.
| Drain-Source Voltage (Vdss) | 60 V |
|---|---|
| Continuous Drain Current (Id) | 115 mA |
| Total Power Dissipation | 200 mW |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | SOT-323 |
The maximum drain-source voltage (Vdss) for this device is 60 V.
The continuous drain current (Id) is 115 mA when the ambient temperature is 25°C.
The device uses an ultra-small surface mount SOT-323 molded plastic case.