2N7002T is a N-channel enhancement mode field effect transistor with low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, and ultra-small surface mount package.
This document is a technical datasheet for the 2N7002T, an N-channel enhancement mode field effect transistor (FET) manufactured by Diodes Incorporated. The device features low on-resistance and fast switching speed, housed in an ultra-small SOT-523 surface mount package.
| Package Type | SOT-523 |
|---|---|
| Continuous Drain Current (Id) | 150 mA |
| Total Power Dissipation (Pd) | 150 mW |
The device supports a continuous drain current of 150 mA at 25°C and 73 mA at 100°C.
The total power dissipation is rated at 150 mW.
The maximum drain-source voltage is 60 V.