2N7007 is a N-channel enhancement-mode vertical DMOS FET produced by Supertex, which features high input impedance, low input capacitance and fast switching speeds. It is suitable for a wide range of switching and amplifying applications.
This document is a datasheet for the Supertex 2N7007, an N-Channel Enhancement-Mode Vertical DMOS FET. The device features a vertical DMOS structure and Supertex's silicon-gate manufacturing process, offering high input impedance, fast switching speeds, and excellent thermal stability. It is designed for applications such as motor controls, converters, amplifiers, and switches.
The datasheet provides comprehensive technical data including absolute maximum ratings, thermal characteristics, and electrical characteristics. Key specifications include a drain-to-source breakdown voltage of 240V, a gate threshold voltage range of 1V to 2.5V, and a continuous drain current of 65mA in a TO-92 package. The document also includes switching waveform diagrams and notes on testing conditions.
| Drain-to-Source Breakdown Voltage | 240 V |
|---|---|
| Gate Threshold Voltage | 1 to 2.5 V |
| Continuous Drain Current (TO-92) | 65mA |
| Operating and Storage Temperature | -55°C to +150°C |
| Input Capacitance | 30 pF |
Applications include motor controls, converters, amplifiers, switches, and power supply circuits.
Yes, the device is free from secondary breakdown and thermally-induced secondary breakdown.