The KST2222A is a NPN type transistor, with a maximum collector-emitter voltage of 40V, a maximum collector-emitter reverse voltage of 75V, a maximum emitter-base voltage of 6V, a maximum collector current of 600mA, and a maximum collector power dissipation of 350mW.
This document provides technical specifications for the KST2222A, a general-purpose NPN epitaxial silicon transistor. It includes absolute maximum ratings such as collector-emitter voltage of 40V and collector current up to 600mA.
The datasheet details electrical characteristics including DC current gain (hfe) ranging from 35 to 100 under various conditions, along with saturation voltages and switching times. It also presents typical performance characteristics via graphs for current gain, leakage current, and power dissipation versus temperature.
| Collector-Base Voltage (Vepo) | 75 Vv |
|---|---|
| Collector-Emitter Voltage (VoEeO) | 40 Vv |
| Emitter-Base Voltage (VeBo) | 6 Vv |
| Collector Current (le) | 600 mA |
| Collector Power Dissipation (Po) | 350 mW |
The device can be stored in a temperature range from -55°C to 150°C.
The absolute maximum collector current is 600 mA.
The device can be stored between -55 °C and 150 °C.
The maximum collector power dissipation is 350 mW.