This is a technical document about KSD5041, an NPN Epitaxial Silicon Transistor with low VCE (sat) and high performance.
This document is a datasheet for the Fairchild Semiconductor KSD5041, an NPN epitaxial silicon transistor designed as an AF output amplifier for electronic flash units. Key features include low collector-emitter saturation voltage and high performance at low supply voltages. The device is packaged in a TO-92 case.
| Collector-Base Voltage | 40 V |
|---|---|
| Collector-Emitter Voltage | 20 V |
| Emitter-Base Voltage | 7 V |
| Collector Current | 5 A |
| Collector Power Dissipation | 0.75 W |
| Junction Temperature | 150 °C |
| Storage Temperature | -55 ~ 150 °C |
| DC Current Gain (Typ) | 600 |
| Current Gain Bandwidth Product | 150 MHz |
| Output Capacitance | 50 pF |
It is an AF output amplifier for electronic flash units.
The maximum junction temperature is 150 °C.