This document provides information on the absolute maximum ratings and electrical characteristics of the KSP05/06 NPN Epitaxial Silicon Transistor from Fairchild Semiconductor Corporation. The transistor has high voltage and power dissipation capabilities and is a complement to the KSP55/56.
This document provides technical specifications for the Fairchild KSP05/06 series of PNP epitaxial silicon amplifiers. The devices are available in a TO-92 package and feature collector-emitter voltages of 60V (KSP05) and 80V (KSPO6), with a maximum collector power dissipation of 625mW.
| Collector-Emitter Voltage (KSP05) | 60 V |
|---|---|
| Collector Power Dissipation | 625 mW |
| Junction Temperature | 150 °C |
| DC Current Gain (Vce=1V, Ic=10mA) | 50 |
The maximum collector power dissipation is 625 mW.