KST05/06 is an NPN type silicon transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 60V, maximum collector-emitter saturation voltage is 0.25V, maximum emitter-base voltage is 4V, maximum collector current is 500mA, and maximum power consumption is 350mW. The package type is SOT-23.
This document provides technical specifications for the Fairchild Semiconductor KST05 and KST06, which are NPN epitaxial silicon driver transistors. The devices are designed as a complement to the KST55/56 series and feature a Collector-Emitter voltage rating of 60V for the KST05 and 80V for the KST06.
| Collector-Emitter Voltage (KST05) | 60 V |
|---|---|
| Collector-Emitter Voltage (KST06) | 80 V |
| Collector Power Dissipation | 350 mW |
| Collector Current | 500 mA |
| Storage Temperature | -65 to +150 °C |
| Thermal Resistance (junction-to-ambient) | 357 °C/W |
The Collector-Emitter Breakdown Voltage (BVceo) for KST06 is 80 V.
The maximum Collector Current (Io) is 500 mA.