This document presents the absolute maximum ratings and electrical characteristics of the KSP55/56 PNP Epitaxial Silicon Transistors produced by Fairchild Semiconductor Corporation. It includes the maximum voltage, current, power dissipation, temperature ratings of the device, as well as the breakdown voltage of collector-emitter, breakdown voltage of emitter-base, collector cut-off current, collector-emitter saturation voltage, base-emitter on voltage, current gain bandwidth, and other electrical characteristics.
This document provides the design specifications, absolute maximum ratings, and electrical characteristics for the Fairchild KSP55 and KSP56 series of PNP epitaxial silicon transistors. The devices are designed as complements to the KSP05/06 models and feature a TO-92 package.
| Collector-Emitter Voltage (Vceo) | -60 V (KSP55), -80 V (KSP56) |
|---|---|
| Collector Power Dissipation | 625 mW |
| Collector Current (Ic) | -500 mA |
| Junction Temperature (Tj) | 150 °C |
No, Fairchild products are not authorized for use as critical components in life support devices without express written approval.
The device is a PNP epitaxial silicon transistor.
The maximum collector power dissipation is 625 mW.