This document describes the features and characteristics of the KST3904 NPN Epitaxial Silicon Transistor.
This document provides the design specifications for the KST3904, a general-purpose NPN epitaxial silicon transistor. It includes absolute maximum ratings such as a collector-emitter voltage of 40 V and a collector current of 200 mA. The datasheet also lists electrical characteristics including DC current gain, breakdown voltages, and switching times under specific test conditions.
| Collector-Base Voltage | 60 V |
|---|---|
| Collector-Emitter Voltage | 40 V |
| Emitter-Base Voltage | 6 V |
| Collector Current | 200 mA |
| Collector Power Dissipation | 350 mW |
| Storage Temperature Range | -55 to 150 °C |
The maximum collector current is 200 mA.
The maximum collector-emitter voltage is 40 V.