INFINEON Manuals

The document describes the role of SVHCs in products and packaging and provides relevant safety data.

SPW47N65C3 CoolMOSTM Power Transistor features include worldwide best R ds,on in TO247, low gate charge, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating; RoHS compliant.

SPD08P06P and SPU08P06P are SIPMOS Power-Transistors with the following features: P-Channel, Enhancement mode, Avalanche rated, dv/dt rated, 175°C operating temperature.

SPP08P06P SIPMOS Power-Transistor, features P-Channel, Enhancement mode, Avalanche rated, dv/dt rated, operating temperature 175°C

This document is the datasheet of Infineon's MOSFET device. This device has high current output capability and supports high voltage low voltage applications. It can be applied to power supplies, switching power supplies and other scenarios.

The IPW60R125CP is a CoolMOSTM power transistor that features the lowest RONxQg, ultra low gate charge, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, and Pb-free lead plating and RoHS compliance. CoolMOS CP is specially designed for: Hard switching topologies, for Server and Telecom

This document is a datasheet for the TDA5250 D2 ASK/FSK 868MHz wireless transceiver. It describes the features and characteristics of the product.

BSP171P SIPMOS® Small-Signal-Transistor Features P-Channel, Enhancement mode, Logic level, Avalanche rated, dv/dt rated, Pb-free lead plating; RoHS compliant.

This datasheet provides the parameters of IPP50R299CP, including the maximum voltage, maximum current, minimum current, maximum power, maximum temperature, etc.

BSP129 is an N-channel, depletion mode, dv/dt rated small signal transistor available with a VGS(th) indicator on reel. It complies with RoHS and features lead-free lead plating.

This document describes the features and characteristics of the SPD06N60C3 CoolMOSTM power transistor, including new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, high peak current capability, ultra low effective capacitances, extreme dv/dt rated, and improved transconductance.

SDT12S60 is the world's first 600V Schottky diode, using revolutionary semiconductor material - Silicon Carbide, with benchmark switching behavior, no reverse recovery, no temperature influence on switching behavior, no forward recovery

This document introduces the IKP15N60T TrenchStop® series power semiconductors, which are low-loss and fast-recovery anti-parallel EmCon HE diodes. The product has a very low VCE(sat) value, maximum junction temperature of 175°C, and short circuit withstand time of 5µs. It is designed for applications such as frequency converters and uninterrupted power supply. The TrenchStop® and Fieldstop technology for 600 V applications offers tight parameter distribution, high ruggedness, temperature stable behavior, and very high switching speed.

The BTS 4141N is a high-side power switch product from Infineon, which has short-circuit protection, current limiting, overload protection, overvoltage protection, undervoltage shutdown, switching inductive loads, output negative voltage clamping, CMOS compatible input, thermal shutdown, ESD protection, loss of GND and loss of Vbb protection, very low standby current, reverse battery protection with external resistor and improved electromagnetic compatibility (EMC).

This document describes the features and characteristics of the BAS116 silicon low leakage diode. It is suitable for low-leakage applications and medium speed switching times. It has a reverse voltage of 80V and a forward current of 250mA. Additionally, the diode has low reverse current and fast reverse recovery time.