INFINEON Manuals

The document describes the features and characteristics of the 2005-10-11 BFG235 1 NPN Silicon RF Transistor, which is suitable for low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz, and has an integrated emitter ballast resistor.

IPP90R340C3 CoolMOS™ power transistor features the lowest RON x Qg figure of merit and extreme dv/dt rating with high peak current capability. It is qualified according to JEDEC1) for target applications and compliant with RoHS. It features lead-free lead plating and offers the world's best R DS,on and ultra-low gate charge. CoolMOS™ 900V is designed for: quasi resonant flyback/forward topologies, PC silverbox and consumer applications, and industrial SMPS.

This document describes the features of SPP12N50C3, SPI12N50C3, and SPA12N50C3 Cool MOS™ power transistors. These transistors utilize a revolutionary high voltage technology and have ultra low gate charge, periodic avalanche rating, and extreme dv/dt rating. Additionally, they have ultra low effective capacitances, improved transconductance, and fully isolated packaging. The document also lists the model numbers, packages, and ordering codes of these products, as well as their maximum ratings and thermal characteristics.

BAR81 is a shunt RF switching diode produced by Rogers Corporation. It has the characteristics of high shunt signal isolation and low shunt insertion loss, and is widely used in high performance RF switches.

SPD08N50C3 is a new type of MOS power transistor launched by Infineon. It features extremely low RDS(on), extremely low gate charge, extreme dv/dt rating, extremely low effective capacitance and improved transconductance.

BSS123 is a N-channel enhancement mode logic level dv/dt rated small-signal transistor.

This document is a datasheet for 75452-14 Rev. 2.5 P switch-type power module, which mainly introduces the package, pin definition, electrical characteristics, power characteristics, package size and other information of the module.

BTS 6142D is a PROFET series Smart High-Side Power Switch with one channel and 12 mΩ resistance, designed for automotive applications.

This document provides detailed information about the BTS711L1 product, including its features and characteristics, such as overload protection, current limiting, short circuit protection, thermal shutdown, overvoltage protection, fast demagnetization of inductive loads, reverse battery protection, undervoltage and overvoltage shutdown, open drain diagnostic output, open load detection, CMOS compatible input, loss of ground and loss of Vbb protection, electrostatic discharge (ESD) protection

The BAS16 series is a silicon switching diode launched by ON Semiconductor. It features high switching speed and is suitable for high-frequency switching applications. The series adopts SOT23, TSLP-2-1, SC79, SCD80, SOD323, TSLP-4-4, SOT363, SC74, SOT323 and other packaging forms to meet the needs of different applications.

SPP80N08S2L-07 and SPB80N08S2L-07 are N-channel enhancement mode Logic Level MOSFETs with a rated voltage of 75V and a maximum RDS(on) of 6.8mΩ and a rated current of 80A.

The BAR64 series is a high voltage current controlled RF resistor for RF attenuator and switches. It features a frequency range above 1MHz up to 6GHz, very low capacitance at zero volt reverse bias at frequencies above 1GHz (typ. 0.17 pF), low forward resistance (typ. 2.1 Ω @ 10 mA) and very low signal distortion

This document is the specification of NXP 10-05 Rev. 2.4 P-Channel MOSFETs

The document is a product specification sheet for VDS, describing its features and characteristics.