INFINEON Manuals

BCV62 is a PNP silicon double transistor designed for use as a current mirror. It features good thermal coupling and VBE matching, high current gain, and low collector-emitter saturation voltage.

The IPP90R500C3 CoolMOS™ Power Transistor features the lowest RON x Qg figure-of-merit, extreme dv/dt rating, and high peak current capability. It is qualified according to JEDEC1) for target applications and is lead-free with lead plating, RoHS compliant, and features ultra low gate charge. CoolMOS™ 900V is designed for Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications, and Industrial SMPS.

The PROFET® ITS612N1 is a smart two channel highside power switch from Infineon Technologies AG for industrial applications. It features overload protection, current limitation, short circuit protection, thermal shutdown, overvoltage protection (including load dump), fast demagnetization of inductive loads, reverse battery protection, undervoltage and overvoltage shutdown with auto-restart and hysteresis, open drain diagnostic output, open load detection in OFF-state, CMOS compatible input, loss of ground and loss of Vbb protection, electrostatic discharge (ESD) protection. It can be used for µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial applications, for all types of resistive, inductive and capacitive loads, and to replace electromechanical relays, fuses and discrete circuits.

IPD50R520CP is a power transistor. It features the lowest RONxQg, ultra low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating, RoHS compliant and qualified according to JEDEC1) for target applications.

C515C 8-Bit Single-Chip Microcontroller is a single-chip microcontroller released by Infineon Technologies

BSP296 is a N-channel enhancement mode logic level power MOSFET from Infineon Technologies. It has a maximum continuous drain current of 1.1A, a maximum on-resistance of 0.7Ω, a maximum reverse diode dv/dt of 6kV/µs, and a maximum power dissipation of 1.79W. The device is available in a PG-SOT-223 package and is rated for operation in temperatures ranging from -55°C to +150°C.

The IPW90R500C3 is a CoolMOS™ 900V power transistor with the lowest figure-of-merit RON x Qg, extreme dv/dt rating, high peak current capability, and Pb-free lead plating; RoHS compliance; ultra low gate charge

BSM 50 GB 120 DN2 is an half-bridge IGBT power module produced by Infineon with maximum DC collector current of 78A and maximum collector-emitter voltage of 1200V.

This document describes the features and characteristics of the SGP10N60A, SGB10N60A, and SGW10N60A fast IGBT products. These products utilize NPT technology and offer 75% lower Eoff and low conduction losses compared to previous generations. They are designed for motor controls and inverter applications. The NPT technology provides very tight parameter distribution, high ruggedness, temperature stable behavior, and parallel switching capability. Complete product spectrum and PSpice models can be found on the Infineon website.

TLE 4241 GM is an integrated adjustable constant current source for supplying LEDs in automotive applications, with adjustable output current and multiple protection features.

The SDP04S60, SDD04S60 SDT04S60 is the world's first 600V Schottky diode, with industry-leading switching characteristics, no reverse recovery, no temperature dependence, fast switching speed, and is ideal for power factor correction applications.

The SPU01N60C3 SPD01N60C3 is a new revolutionary high voltage MOS power transistor with ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.

IKP04N60T is a power semiconductor product launched by Infineon. It uses TrenchStop® and Fieldstop technology and has the characteristics of low VCE(sat), high reliability and high switching speed.

IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode is a high-performance Schottky diode produced by IDT company. It features benchmark switching behavior, no reverse recovery/no forward recovery, no temperature influence on switching behavior, high surge current capability and so on.