BAV99 is a silicon switching diode launched by ON Semiconductor. It has the characteristics of high switching speed, high breakdown voltage and low power consumption. It is suitable for applications such as high-frequency switching power supply, battery charger, DC/DC converter
IKW25T120 is a low loss DuoPack IGBT from Infineon, which is produced using TrenchStop and Fieldstop technology and features a soft, fast recovery anti-parallel EmCon HE diode.
This document is a specification sheet for a product, describing its features and characteristics, including operating voltage, temperature range, current, etc.
SPP08N80C3 SPA08N80C3 is a low on-resistance, ultra low gate charge, high isolation power transistor, with a maximum voltage of 800V and a rated current of 8A.
This datasheet introduces the features and characteristics of the PROFET® BTS721L1 four-channel high-side power switch, including overload protection, current limiting, short-circuit protection, thermal shutdown, overvoltage protection (including load dump) and fast demagnetization of inductive loads.
This document describes the features and characteristics of the BFR380F NPN silicon RF transistor, such as high current capability, low noise figure, and low voltage operation. It is ideal for wide dynamic range applications and low phase noise oscillators up to 3.5 GHz.
The SPW15N60CFD CoolMOSTM power transistor features intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra-low gate charge, extreme dv/dt rating, high peak current capability, etc. It is designed for soft-switching PWM stages, LCD and CRT TVs.
PROFET® ITS428L2 is a smart high-side power switch for industrial applications. It integrates a high-performance N-channel vertical power MOSFET, charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.
SPP20N60CFD is the next-generation high-voltage power transistor. Its RDS(on) is 0.22 ohm and ID is 20.7 A. The product has extremely low gate charge, periodic avalanche rating, extreme dv/dt rating, high peak current capability, intrinsic fast-recovery body diode and extremely low reverse recovery charge.
IPP60R250CP CoolMOSTM power transistor features the lowest figure-of-merit RONxQg, ultra low gate charge, extreme dv/dt rated, high peak current capability. It is designed for hard switching SMPS topologies.
BSP 372 is an N-channel enhancement mode logic level avalanche rated small signal transistor. It features a maximum drain-source breakdown voltage of 100V, a maximum continuous drain current of 1.7A and a 0.31 ohm on-state drain-source resistance.
ITS 4142N is a smart high-side power switch for industrial applications. It has short circuit protection, current limitation, overload protection, overvoltage protection (including load dump), undervoltage shutdown (with auto-restart and hysteresis) and other features.
