The SPP21N50C3, SPI21N50C3 and SPA21N50C3 are Cool MOS™ power transistors that feature the world's best RDS(on) and ultra low effective capacitances. These transistors have periodic avalanche rating, extreme dv/dt rating, ultra low gate charge and improved transconductance.
BC856, BC857, BC860 are three PNP silicon AF transistors with high current gain, low collector-emitter saturation voltage and low noise, suitable for AF input stages and driver applications.
The IPI90R1K0C3 CoolMOS™ power transistor features the lowest figure-of-merit RON x Qg, extreme dv/dt rating, high peak current capability. It is designed for quasi resonant flyback/forward topologies, PC Silverbox and consumer applications, and industrial SMPS.
BSP171P SIPMOS® Small-Signal-Transistor is an enhancement mode P-channel device with logic level, avalanche rated, dv/dt rated and Pb-free lead plating, RoHS compliant.
SPP06N60C3 CoolMOSTM Power Transistor is a high performance power transistor with ultra low gate charge, periodic avalanche rated, high peak current capability, ultra low effective capacitances and extreme dv/dt rated.
SN7002W is a N-channel enhancement mode logic level dv/dt rated small signal transistor with a maximum voltage of 60V, an RDS(on) of 5 ohms and an ID of 0.23 A.
This document describes the features and characteristics of the BFP620 Apr-21-2004 1 NPN Silicon Germanium RF Transistor. It is suitable for a wide range of wireless applications, especially CDMA and WLAN applications. The noise figure is outstanding with 0.7 dB at 1.8 GHz and 1.3 dB at 6 GHz. The maximum stable gain is 21.5 dB at 1.8 GHz and 11 dB at 6 GHz. The transistor is equipped with gold metallization for extra high reliability.
IPW50R199CP CoolMOSTM power transistor features the lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rated, high peak current capability, Pb-free lead plating; RoHS compliant and qualified according to JEDEC for target applications.
This document introduces the characteristics of SPA15N65C3 CoolMOSTM power transistor, including low gate charge, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications and lead-free lead plating; RoHS compliant.
This document describes the features and characteristics of the IPA60R299CP CoolMOS® power transistor, including the lowest figure-of-merit RONxQg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, etc.
