This document describes the features and characteristics of the IPW50R140CP CoolMOSTM power transistor, including worldwide best R DS,on, lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rated, high peak current capability, etc.
BFP540 is an NPN silicon RF transistor with outstanding Noise Figure F=0.9dB and high reliability gold metallization, suitable for 1.8GHz highest gain low noise amplifier.
This document describes the features of the IPW60R299CP CoolMOSTM power transistor, including the lowest figure-of-merit R ONxQg, ultra-low gate charge, extreme dv/dt rating, and high peak current capability. The product is qualified according to JEDEC standards and is suitable for hard switching SMPS topologies.
The document describes an 8-bit single-chip microcontroller called C505, including models such as C505C, C505A, and C505CA. The microcontroller is manufactured by Infineon Technologies AG and offers high performance and reliability. The document also provides further information on technology, delivery terms, and prices.
This document is a datasheet that describes the features and characteristics of the XC164CS-16F 16-bit single-chip microcontroller produced by Infineon Technologies AG in March 2006.
SPW52N50C3 is a high voltage MOS power transistor with the world's best RDS(on), ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances and improved transconductance
This document is a product summary of BSP297 Rev. 1.21 SIPMOS small-signal transistor. The transistor is an N-channel enhancement mode MOSFET with a maximum drain-source voltage of 200V and a drain-source on-resistance of 1.8Ω. Its features include enhancement mode logic level, dv/dt rating, and PG-SOT-223 package.
This document provides a summary of the SN7002N SIPMOS small-signal transistor, released on July 21, 2005, in Rev. 2.2. The transistor is an N-channel enhancement mode device with logic level characteristics. It has a drain-source voltage of 60V, a drain-source on-resistance of 5Ω, and a drain current of 0.2A.
IPI60R165CP CoolMOS power transistor features the lowest RONxQg ratio, ultra low gate charge, extreme dv/dt rating and high peak current capability. It is qualified according to JEDEC1) standard for target applications in server and telecom.
BUZ 345 is an N-channel enhancement mode avalanche rated power transistor. It features a 100 V drain-source breakdown voltage, 41 A continuous drain current, and 0.045 Ω drain-source on-resistance. It is suitable for a variety of applications such as motor drives, power conversion, and lighting control.
This document describes the features and characteristics of the SPI80N08S2-07, SPP80N08S2-07, and SPB80N08S2-07 OptiMOS power transistors, released on May 9, 2003. These features include N-channel enhancement mode, 175°C operating temperature, avalanche rating, dv/dt rating, etc.
PROFET® BTS426L1 is a high side power switch launched by Texas Instruments. It has overload protection, current limitation, short circuit protection, thermal shutdown, overvoltage protection (including load dump) and other features. It can be applied to 12 V and 24 V DC grounded loads, replacing electromechanical relays, fuses and discrete circuits.
