SPD08P06P and SPU08P06P are SIPMOS Power-Transistors with the following features: P-Channel, Enhancement mode, Avalanche rated, dv/dt rated, 175°C operating temperature.
The Infineon SPD08P06P datasheet details the key features and product summary of the P‑channel SIPMOS® power transistor, including its maximum ratings, thermal characteristics, and electrical parameters. It also includes typical characteristic curves and safety information.
The document lists specifications such as drain‑source voltage, continuous drain current, on‑state resistance, avalanche energy, and operating temperature range, along with dynamic characteristics like capacitances and gate charge. Legal and warranty notices are provided at the end of the handbook.
| Drain‑source voltage (Vds) | -60 V |
|---|---|
| Continuous drain current (Id) | -8.8 A |
| On‑state resistance (Rds(on)) | 0.23 Ω typ |
| Avalanche energy (single pulse) | 70 mJ |
| Operating temperature range | -55 °C to 175 °C |
| Gate threshold voltage (Vgs(th)) | -2.1 V to -3.4 V |
| Reverse recovery time (trr) | 60‑90 ns |
The device is rated for a drain‑source voltage of -60 V.
It can continuously conduct -8.8 A of drain current at 25 °C.
The transistor operates from -55 °C up to 175 °C.