INFINEON Manuals

SPP15N65C3 CoolMOS power transistor features include low gate charge, extreme dv/dt rating, and high peak current capability. The product is qualified according to JEDEC1) for target applications, and meets lead-free lead plating and RoHS requirements. CoolMOS C3 is designed for notebook adapter.

IPA50R520CP is a CoolMOSTM power transistor with the lowest RON x Qg figure of merit, ultra low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating and RoHS compliance.

SPP11N60CFD is a high voltage power transistor with new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, intrinsic fast-recovery body diode and extreme low reverse recovery charge

This document describes the CoolSET™-F3 series of power management and supply products, including multiple models of ICE3A(B)0365/0565/1065/1565, ICE3A(B)2065/2565, ICE3A0565Z/2065Z, ICE3A(B)2065I/3065I/3565I, ICE3A(B)5065I/5565I, ICE3A(B)2065P/3065P/3565P, and ICE3A(B)5065P/5565P. These products are off-line SMPS current mode controllers with integrated 650V startup cell/depletion CoolMOS™.

This document is a datasheet for Infineon Technologies AG's 8-bit XC878CLM single-chip microcontroller. The document describes the features and characteristics of this microcontroller.

BAT64 series is a low loss, fast recovery, silicon Schottky diodes for meter protection, bias isolation and clamping application with integrated diffused guard ring and low forward voltage

The SPP07N60CFD CoolMOSTM power transistor features an intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, etc. It is designed for soft switching PWM stages, LCD, and CRT TV applications.

SPD02N60C3/SPU02N60C3 is a high voltage power transistor of Cool MOS™ series, with features such as ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances and 150°C operating temperature

BSC022N03S OptiMOS®2 Power Transistor is a fast switching MOSFET for SMPS optimized for notebook DC/DC converters. It is qualified according to JEDEC1 for target applications. It features N-channel, logic level, very low on-resistance R DS(on), excellent gate charge x R DS(on) product (FOM), superior thermal resistance, avalanche rated, dv/dt rated.

BSP 315 P SIPMOS Small-Signal-Transistor is a P-Channel, Enhancement mode, Avalanche rated, Logic Level, dv/dt rated electronic component.

The BSP317P SIPMOS is a logic-level N-channel enhancement mode MOSFET from Texas Instruments with a maximum VDS of -250V and a maximum Ptot of 1.8W, with an operating temperature of -55-150℃.

SPA20N60CFD is CoolMOSTM Power Transistor, features new revolutionary high voltage technology, intrinsic fast-recovery body diode, extremely low reverse recovery charge and ultra low gate charge, Extreme dv/dt rated, High peak current capability, Periodic avalanche rated and qualified according to JEDEC0) for target applications