This document describes the features and characteristics of CoolSET™-F2 ICE2A0565/165/265/365 ICE2B0565/165/265/365 ICE2A0565G ICE2A0565Z ICE2A180Z/280Z ICE2A765I/2B765I ICE2A765P2/2B765P2 ICE2A380P2 Off-Line SMPS Current Mode Controller with integrated 650V/800V CoolMOS™.
BSP149 is a N-channel, depletion mode, dv /dt rated, Pb-free lead plated small signal transistor. It has maximum ratings of 0.66 A continuous drain current, 0.53 A maximum drain current, 2.6 A pulsed drain current, 6 kV / µs reverse diode dv /dt and 1.8 W maximum power dissipation.
IPP50R399CP is a CoolMOSTM power transistor that features the lowest RON x Qg figure-of-merit, ultra-low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating and RoHS compliance. It is qualified according to JEDEC1) for target applications.
IPW60R075CP CoolMOSTM Power Transistor is a low power loss power transistor with extremely low on-resistance and charge, capable of withstanding voltages up to 650V. It is designed for hard switching SMPS topologies for Server and Telecom applications.
This document is a specification for the Wireless Components ASK/FSK Single Conversion Receiver TDA 5210 Version 3.0. The product is a wireless component with ASK/FSK single conversion receiver functionality. The document describes the features and characteristics of the product.
This document describes the features of SPU02N60S5 and SPD02N60S5 Cool MOS™ power transistors. These transistors utilize a new high voltage technology and have ultra-low gate charge, periodic avalanche rating, and extreme dv/dt rating. They also have ultra-low effective capacitances and improved transconductance. The document provides the maximum ratings for these products, such as continuous drain current, pulsed drain current, avalanche energy, etc.
BSP318S is a N-Channel Enhancement mode Small-Signal-Transistor with avalanche rated, logic level and dv/dt rated. Product Specification: Drain-Source voltage is 60V, Drain-Source on-state resistance is 0.09 Ohm, Continuous drain current is 2.6A.
The BTS 282 Z is a speed sensor with logic level input and analog driving. It has a switching frequency up to 1MHz, overtemperature protection, avalanche rating and high current pinning.
This document provides technical information and electrical properties of the BSM50GB120DLC IGBT module. The module features a maximum collector-emitter voltage of 1200V, a DC collector current of 50A, and a repetitive peak collector current of 115A.
This document describes the features and characteristics of the IPI60R125CP CoolMOSTM power transistor, including the lowest figure-of-merit RONxQg, ultra low gate charge, extreme dv/dt rating, high peak current capability, etc. This product is designed for hard switching topologies in server and telecom applications.
IPW60R199CP CoolMOSTM Power Transistor is a power transistor produced by Infineon. It has the lowest RONxQg, ultra-low gate charge, extreme dv/dt rating, high peak current capability. It meets JEDEC standards and is suitable for server and telecom applications.
This document provides technical parameters for 2N7000N-3-11 transistor, including maximum current, maximum power dissipation, drain voltage, static gate source voltage, gate voltage, etc.
