This data sheet is about SPB12N50C3 Cool MOS power transistor, including the product's maximum rated current, maximum peak current, reverse diode dv/dt, maximum power dissipation, operating temperature range and other information.
This document describes the features of SGP30N60 and SGW30N60 fast IGBT products, including lower Eoff, low conduction losses, short circuit withstand time, NPT technology application, and JEDEC certification.
IPW60R250CP CoolMOSTM Power Transistor features the lowest figure-of-merit RONxQg, ultra low gate charge, extreme dv/dt rating, and high peak current capability. This product is qualified according to JEDEC1) for target applications, Pb-free lead plating; RoHS compliant. CoolMOS CP is designed for: Hard switching SMPS topologies.
The FP40R12KE3 is an IGBT module from Infineon with a 1600V reverse voltage, a maximum DC current of 60A, a surge current of 315A, and a total power dissipation of 200W.
SPP/B80P06P SIPMOS® Small-Signal-Transistor is a P-channel enhancement mode diode with avalanche rating, dv/dt rating and 175°C operating temperature. It is compliant with RoHS standard.
C161PI is a 16-bit single-chip microcontroller from Infineon, which is mainly used in industrial automation, automotive electronics, consumer electronics, motor control and other fields.
This document introduces the technical parameters of the Thinfilm SiC Schottky Diode, including maximum ratings, operating temperature range, package type, and pin assignment.
The SPB20N60S5 Cool MOS™ power transistor has a maximum voltage of 600 volts, a 0.19-ohm on-resistance and a continuous drain current of 20 amperes. The transistor features ultra-low gate charge, extreme dv/dt ratings, ultra-low effective capacitances, and improved transconductance.
SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor is a high voltage transistor with low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.
IPA90R1K0C3 CoolMOS™ Power Transistor features the lowest figure-of-merit RON x Qg, extreme dv/dt rating, high peak current capability. It is qualified according to JEDEC1) for target applications. The transistor is designed for quasi resonant flyback/forward topologies, PC Silverbox and consumer applications, and industrial SMPS.
IKW50N60T is a IGBT product launched by Infineon. It uses TrenchStop® and Fieldstop technology and has the characteristics of low voltage drop, high reliability, high heat resistance, etc. This product is suitable for frequency converters and uninterrupted power supply applications.
The IPD60R600CP CoolMOS power transistor features the lowest RON x Qg figure-of-merit, ultra-low gate charge, extreme dv/dt rating, high peak current capability and qualified according to JEDEC1) for target applications.
ITS 4142N is a smart high-side power switch for industrial applications. It has short circuit protection, current limitation, overload protection, overvoltage protection (including load dump), undervoltage shutdown (with auto-restart and hysteresis) and other features.
