INFINEON Manuals

BAV70 is a silicon switching diode produced by ON Semiconductor. Its maximum reverse voltage is 80V, peak reverse voltage is 85V, maximum forward current is 200mA, maximum non-repetitive peak surge forward current is 4.5A, total power dissipation is 250mW, junction temperature is 150°C, and storage temperature is -65 to 150°C.

The SPW24N60C3 is a new type of high voltage power transistor with extremely low gate charge, periodic avalanche rating, extreme dv/dt rating, and ultra low effective capacitances.

This datasheet mainly introduces the maximum ratings, characteristics, package, etc. of the SPB07N60C3 power transistor.

This document introduces the BFS17P, an NPN silicon RF transistor released on November 17, 2005. It is suitable for broadband amplifiers up to 1 GHz with collector currents ranging from 1 mA to 20 mA. It is an ESD-sensitive device and requires careful handling.

This data sheet provides detailed information on the features, functions and specifications of the 8-bit XC886/888CLM single-chip microcontrollers.

This data sheet is about the product information of SPP06N80C3 and SPA06N80C3, including model, package, maximum current, gate voltage, power consumption, etc.

BA592/BA892 is a silicon RF switching diode from Fujistu, which is used for band switching in TV/VTR tuners and mobile applications. It features very low forward resistance (typical 0.45 ohm @ 3mA) and small parasitic capacitance.

IPA50R199CP is a CoolMOSTM power transistor that features the lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rating, and high peak current capability. It is RoHS compliant and is designed for hard and softswitching SMPS topologies, CCM PFC for ATX, Notebook adapter, PDP and LCD TV, and PWM for ATX, Notebook adapter, PDP and LCD TV.

IKW08T120 is a TrenchStop® Series Power Semiconductors IGBT from Infineon, it has soft recovery and fast recovery characteristics, suitable for frequency converters and uninterruptible power supply applications.

BAR65 is a silicon PIN diode used for low loss transmit-receiver switches in mobile communication and band switch for TV-tuners. It has very low forward resistance and low capacitance, making it suitable for fast switching applications.

This file details the characteristics of the 804-10 Rev. 2.5 P-channel power MOSFET, including maximum voltage, current, power and thermal resistance.

This document is about PROFET® BTS 6133D data sheet. The product has reverse battery protection, reverse operation, short circuit protection, current limiting, overload protection, thermal shutdown, overvoltage protection, loss of ground protection, loss of Vbb protection, low standby current, fast demagnetization etc.

This document describes the features and characteristics of the BAS116 silicon low leakage diode. It is suitable for low-leakage applications and medium speed switching times. It has a reverse voltage of 80V and a forward current of 250mA. Additionally, the diode has low reverse current and fast reverse recovery time.

The BTS 4141N is a high-side power switch product from Infineon, which has short-circuit protection, current limiting, overload protection, overvoltage protection, undervoltage shutdown, switching inductive loads, output negative voltage clamping, CMOS compatible input, thermal shutdown, ESD protection, loss of GND and loss of Vbb protection, very low standby current, reverse battery protection with external resistor and improved electromagnetic compatibility (EMC).