INFINEON Manuals

This document describes the features and characteristics of the SPD06N80C3 Cool MOS™ power transistor, including high voltage technology, low RDS(on), ultra-low gate charge, periodic avalanche rating, and extreme dv/dt rating.

This document introduces the features and characteristics of SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS Power-Transistor, including maximum current, on-resistance, pin package, model, maximum operating temperature, power consumption, voltage, and ambient temperature.

This document introduces the preliminary specification of TDA5255 E1 ASK/FSK 434MHz wireless transceiver

The IPA50R399CP CoolMOS is a power transistor with the lowest RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating, RoHS compliant, and qualified according to JEDEC0) for target applications. CoolMOS CP is designed for: • Hard and softswitching SMPS topologies • DCM PFC for Lamp Ballast • PWM-Stages Lamp Ballast, LCD and PDP TV

The document describes the features and characteristics of the SPD04N80C3 Cool MOS™ power transistor, including new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, improved transconductance, etc.

BSO104N03S is a N-channel MOSFET from Infineon with excellent switching speed and low on-resistance, suitable for notebook DC/DC converters and other applications.

This document is a datasheet for the XC164GM 16-bit single-chip microcontroller with C166SV2 core from Infineon Technologies AG. It provides information about the features and characteristics of the microcontroller.

The features of IPW50R399CP CoolMOSTM Power Transistor include the lowest RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating, RoHS compliant, and qualified according to JEDEC1) for target applications. CoolMOS CP is designed for: Hard and soft switching SMPS topologies, DCM PFC for Lamp Ballast, PWM for Lamp Ballast, LCD & PDP TV.

PROFET® BTS 410 E2 is a high side power switch with overload protection, current limitation, short circuit protection, thermal shutdown, overvoltage protection (including load dump), fast demagnetization, reverse battery protection, undervoltage and overvoltage shutdown with auto-restart and hysteresis, open drain diagnostic output, open load detection in ON-state, CMOS compatible input, loss of ground and loss of Vbb protection, electrostatic discharge (ESD) protection.

IPS50R520CP is a CoolMOSTM power transistor that features the lowest RONxQg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating, and RoHS compliance.

IPP60R165CP CoolMOSTM power transistor features the lowest RONxQg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, lead-free lead plating, RoHS compliant. CoolMOS CP is specially designed for: Hard switching topologies for Server and Telecom.

This document describes the features of SPW35N60CFD CoolMOSTM power transistor, including high voltage technology, intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, etc.

The document is a product specification sheet for VDS, describing its features and characteristics.

This document is the specification of NXP 10-05 Rev. 2.4 P-Channel MOSFETs