SPW47N65C3 CoolMOSTM Power Transistor features include worldwide best R ds,on in TO247, low gate charge, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating; RoHS compliant.
The SPW47N65C3 is a CoolMOS™ power transistor offered by Infineon Technologies. The document provides a product summary, key features such as low gate charge, high peak current capability, and compliance with JEDEC and RoHS standards.
Detailed sections cover maximum ratings, thermal and electrical characteristics, dynamic behavior, gate charge, typical output curves, safe operating area, transient thermal impedance, capacitance values, diode switching parameters, and mechanical outline dimensions.
| Continuous Drain Current (Id) at 25°C | 47 A |
|---|---|
| Pulsed Drain Current (Id,pulse) at 25°C | 144 A |
| Maximum Avalanche Energy (single pulse) | 1800 mJ |
| Gate Charge Total (Qg) to 10 V | 255 nC |
| Input Capacitance (Ciss) at Vgs=0 V, Vds=25 V | 7000 pF |
| Output Capacitance (Coss) at 1 MHz | 2300 pF |
| Drain‑Source On‑State Resistance (RDS(on)) at 25°C | 0.06 Ω |
| Maximum Power Dissipation (Ptot) at 25°C | 415 W |
The continuous drain current is rated at 47 A at 25 °C.
The device can absorb up to 1800 mJ of avalanche energy in a single pulse.
The input capacitance (Ciss) is 7000 pF at Vgs = 0 V and Vds = 25 V.