Fairchild manuals, page 85
FAIRCHILD NDS9945 Manual
The NDS9945 is a N-Channel enhancement mode power field effect transistor produced by Fairchild using its proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
FAIRCHILD NDS9948 Manual
NDS9948 is a P-Channel MOSFET from Fairchild Semiconductor with a 60V rating and a maximum current of 2.3A. RDS(ON) is 250mΩ, and it has low gate charge and fast switching speed.
FAIRCHILD NDS9952A Manual
The document describes the absolute maximum ratings and thermal characteristics of the NDS9952A dual N&P-channel enhancement mode field effect transistor released in February 1996. The product is produced using high-density DMOS technology and features low on-state resistance, superior switching performance, and resistance to high-energy pulses. It is particularly suitable for low voltage applications such as notebook computer power management and other battery powered circuits.
FAIRCHILD NDT014 Manual(1)
NDT014 N-Channel Enhancement Mode Field Effect Transistor is a power field effect transistor produced using Fairchild's proprietary high cell density DMOS technology. It features extremely low on-state resistance and superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
FAIRCHILD NDT014L Manual
NDT014L is an N-channel logic level enhancement mode power field effect transistor with extremely low RDS(ON), high power and current handling capability in a widely used surface mount package.
FAIRCHILD NDT2955 Manual
This document describes the features and characteristics of the 60V P-Channel enhancement mode field effect transistor produced by Fairchild Semiconductor. It is primarily used for power management applications.
FAIRCHILD NDT3055 Manual
The NDT3055 is a N-channel enhancement mode field effect transistor with a maximum current of 4 A and a maximum voltage of 60 V. It has extremely low RDS(ON) and high power and current handling capability. This device is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
FAIRCHILD NDT3055L Manual
This document introduces ND3055L, a logic level N-channel enhancement mode power field effect transistor. It has a maximum current of 4A and a maximum voltage of 60V. The product uses Fairchild's proprietary high density DMOS technology and has extremely low on-state resistance and superior switching performance. It is particularly suitable for low voltage applications such as DC motor control and power conversion.
FAIRCHILD NDT451AN Manual
NDT451AN N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
FAIRCHILD NDT452AP Manual
NDT452AP P-Channel Enhancement Mode Field Effect Transistor is a power field effect transistor that uses Fairchild's proprietary high cell density DMOS technology, which has extremely low RDS(ON) and superior switching performance.
FAIRCHILD NDT454P Manual
This document describes the features and characteristics of the NDT454P P-Channel Enhancement Mode Field Effect Transistor, released in June 1996. The product is a power field effect transistor produced using high cell density DMOS technology, providing low on-state resistance and superior switching performance. It is particularly suitable for low voltage applications such as notebook computer power management and other battery powered circuits, where fast switching, low power loss, and resistance to transients are required.
FAIRCHILD NDT456P Manual
The document describes the features and characteristics of the NDT456P P-Channel Enhancement Mode Field Effect Transistor manufactured in December 1998. The transistor has a drain-source voltage of -30V, gate-source voltage of ±20V, and maximum drain current of -7.5A. It is produced using a high-density cell design, providing extremely low on-state resistance and high power and current handling capability. It is suitable for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
FAIRCHILD RFD12N06RLE RFD12N06RLESM RFP12N06RLE Manual
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET. This product has ultra low on-resistance, temperature compensated PSPICE® and SABER© electrical models, Spice and SABER© thermal impedance models.
FAIRCHILD RFD14N05L RFD14N05LSM RFP14N05L Manual
RFD14N05L, RFD14N05LSM, RFP14N05L are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
FAIRCHILD RFD14N05 RFD14N05SM Manual
This datasheet provides the specifications of RFD14N05 and RFD14N05SM, including rated voltage, packaging type, power dissipation, etc.