Fairchild manuals, page 82
FAIRCHILD Using Fairchild Semiconductor Dual Cool MOSFETs handbook
Describes the package construction, thermal characterization challenges and some systemic examples utilizing heat sinks of Fairchild Semiconductor Dual CoolTM MOSFETs.
FAIRCHILD Assembly Guidelines for Asymmetric Dual Power33 Packaging handbook
This document describes the assembly guidelines for the Fairchild Dual Power33 package, which uses Molded Leadless Packaging (MLP) technology and has low package height and excellent thermal performance.
FAIRCHILD Assembly Guidelines for MicroFET 1.6x1.6mm Packaging handbook
This application note introduces the MicroFET 1.6x1.6 package technology, including MLP technology, package design, and assembly process
FAIRCHILD GreenBridge to Replace Conventional Diode Bridge in Power Over Ethernet Applications handbook
Fairchild’s GreenBridge™ solution reduces power losses in the bridge circuit and leads to an efficient and cost-effective PoE system.
FAIRCHILD Guidelines for Using Fairchilds Power56 handbook
This manual introduces the use of Power56 MOSFET, including mounting techniques and circuit design. The MOSFET has the characteristics of miniaturization, high performance and low power consumption.
FAIRCHILD Assembly Guidelines for Dual Power56 Packaging handbook
This application note focuses on the soldering and back end processing of the Dual Power56
FAIRCHILD A New PSPICE Electro-Thermal Subcircuit For Power MOSFETs handbook(1)
This document introduces an empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses.
FAIRCHILD A New PSPICE Electro-Thermal Subcircuit For Power MOSFETs datasheet(1)
This document presents an empirical self-heating SPICE MOSFET model that accurately portrays the vertical DMOS power MOSFET electrical and thermal responses. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model [2,3] is highly accurate and is recognized in the industry. The sequence of the model calibration procedure using parametric data is described. Simulation response of the new self-heating MOSFET model track the dynamic thermal response and is independent of SPICE’s global tem- perature definition.
FAIRCHILD AN-9034 Power MOSFET Avalanche Guideline handbook
The Power MOSFET is a very popular switching device used in switching power supplies and DC-DC converters. Their operation frequency is being continuously increased to reduce size and increase power density. This causes high di/dt, intensifies the negative effect from parasitic inductances, and results in high voltage spike between the Power MOSFET drain and source during device turn off. The spike is worst at power on due to empty bulk capacitors and small inductance because the transformer primary side inductance almost reaches the level of leakage inductance. Fortunately, the Power MOSFET is equipped to withstand a certain level of stress, unnecessitating expensive protection circuits. This note presents an effective way to determine the applicability of a Power MOSFET in an application. The designers can balance between cost and reliability.
FAIRCHILD AN7004 Power Converter Topology MOSFET Selection for 48-V Telecom Applications handbook
This application note provides information on how to select FETs for primary side switches in 48V power converters. Basic topologies of different 48V power converters are introduced and detailed guidelines for selecting FETs are provided.
FAIRCHILD AN1031 Considerations in Designing the Printed Circuit Boards of Embedded Switching Power Supplies handbook
This document provides an overview of how to design printed circuit boards (PCBs) for embedded switching power supplies. It covers the key rules and considerations to keep in mind when designing a PCB, as well as how to avoid some common mistakes.
FAIRCHILD AN1028 Maximum Power Enhancement Techniques for SOT-223 Power MOSFETs handbook
This document introduces how to maximize the power handling capability of SOT-223 Power MOSFETs. This document provides the optimum design method of copper mounting pads to improve component performance and circuit board packing density.
FAIRCHILD AN-9045 WLCSP Assembly Guidelines handbook
This document describes the features and advantages of Wafer level chip scale packaging (WLCSP) technology, as well as manufacturing process optimization recommendations for Fairchild Semiconductor WLCSP components.
FAIRCHILD AN1026 Maximum Power Enhancement Techniques for SuperSOT -6 Power MOSFETs handbook
This paper discusses how to improve the power performance of the SuperSOTTM-6 Power MOSFET by optimizing the design of copper mounting pads. By using the thermal solution suggested in the document, users can take full advantage of the exceptional performance features of Fairchild Semiconductor's latest Power MOSFET, including very low on-resistance and improved junction-to-case thermal resistance (RθJC). This ultimately leads to improved component performance and higher circuit board packing density.
FAIRCHILD AN-4153 Designing Asymmetric PWM Half-Bridge Converters with a Current Doubler Synchronous Rectifier using FSFA-Series Fairchild Power Switches (FPS ) handbook
This design guide describes the design of asymmetric PWM half-bridge converters using Fairchild FSFA-series power switches (FPSTM) with a current doubler and synchronous rectifier.
