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FDMC7660DC N-Channel Dual CoolTM PowerTrench® MOSFET is a 30V, 40A, 2.2mΩ MOSFET. It is manufactured using Fairchild Semiconductor’s advanced PowerTrench® process. This device integrates the advantages of both silicon and Dual CoolTM package technologies, offering the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. It is ideal for use in DC/DC converters as a synchronous rectifier, telecom secondary side rectification and high end server/workstation.
FDMC7660 N-Channel PowerTrench® MOSFET is a high-performance N-channel MOSFET with extremely low on-state resistance, suitable for power management and load switching applications in notebook computers and portable battery packs.
FDMC7582 is an N-Channel PowerTrench® MOSFET with a maximum resistance of 5.0 mΩ. It is suitable for DC/DC converters with low charge and fast switching speed.
FDMC7572S N-Channel Power Trench® SyncFETTM is a low rDS(on) and high efficiency MOSFET device which can be used for synchronous rectifier, Notebook Vcore / GPU low side switch, Networking Point of Load low side switch and Telecom secondary side rectification applications.
FDMC6890NZ is a compact single-package solution for DC to DC converters with excellent thermal and switching characteristics. Inside the Power 33 package features two N-channel MOSFETs with low on-state resistance and low gate charge to maximize the power conversion and switching efficiency. The Q1 switch also integrates gate protection from unclamped voltage input.
The FDMC6679AZ P-Channel PowerTrench® MOSFET is a low-resistance MOSFET with a maximum on-resistance of 10 mΩ. The device uses advanced trench technology and has high power and current handling capabilities, and is RoHS compliant.
The FDMC6675BZ is a P-Channel Power Trench MOSFET from Fairchild Semiconductor. This product features extremely low rDS(on) and can be used in load switch applications in notebook computers and servers.
FDMC6296 is a N-Channel Power Trench® MOSFET from Fairchild Semiconductor Corporation. It has a maximum drain-to-source voltage of 30V, a maximum drain-to-source current of 11.5A and a maximum on-resistance of 10.5mΩ. It is suitable for Point of Load converters and 1/16 Brick synchronous rectifiers.
FDMC510P P-Channel PowerTrench® MOSFET is a high performance, low rDS(on), high power and current handling capability surface mount package MOSFET, suitable for battery management and load switch applications.
The FDMC4435BZ P-Channel Power Trench® MOSFET is a trench technology MOSFET produced by Fairchild Semiconductor. It has the characteristics of high performance, low power consumption, and high current driving capability. It is suitable for load switching applications in notebook computers and portable battery packs.
FDMC3612 is a N-channel power MOSFET produced by Fairchild Semiconductor. Its maximum on-state resistance is 110 mΩ and its maximum off-state resistance is 122 mΩ. This product can be used in DC-DC conversion and PSE switch applications.
FDMC3020DC N-Channel Dual CoolTM PowerTrench® MOSFET is a high performance N-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It offers the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance, making it ideal for applications such as DC/DC converters, telecom secondary side rectification and high end server/workstation.
