Fairchild Manuals

This product is a N-channel logic level ultra-low resistance power MOSFET with ultra low gate resistance (rDS(ON) = 0.030 Ω, VGS = 10V, rDS(ON) = 0.035 Ω, VGS = 5V), which can be used in various applications.

HUF76429P3, HUF76429S3S is a 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET from Fairchild Semiconductor Corporation.

This document describes the features and characteristics of the Fairchild Semiconductor products HUF76439P3 and HUF76439S3S, including ultra-low on-resistance, temperature-compensated simulation models and thermal impedance models, as well as peak current vs pulse width curve and switching time vs RGS curve. Ordering information and absolute maximum ratings are also provided.

This document introduces the HUF76609D3 and HUF76609D3S products from Fairchild Semiconductor Corporation. These are N-channel logic level UltraFET® power MOSFETs with ultra-low on-resistance and high peak current capability. The document also provides packaging symbols, features and characteristics of the products, as well as ordering information and absolute maximum ratings.

HUF76629D3 and HUF76629D3S are 20A, 100V, 0.054 Ohm, N-channel, logic level UltraFET® power MOSFETs.

HUF76639P3, HUF76639S3S is a 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET manufactured by Fairchild Semiconductor Corporation

HUFA75852G3_F085 is a 75A, 150V, 0.016 Ohm, N-channel, UltraFET® Power MOSFET, packaged in JEDEC TO-247.

This document describes the features and characteristics of Fairchild Semiconductor Corporation's HUFA76429D3 and HUFA76429D3S models, including ultra-low on-resistance, simulation models, peak current vs pulse width curve, UIS rating curve, and switching time vs RGS curve.

This document describes the features and characteristics of the IRFM120A product, including avalanche rugged technology, lower input capacitance, improved gate charge, extended safe operating area, and lower leakage current. The product has lower leakage current and on-resistance, and is compatible with IEEE802.3af standard.

IRL640A is a power MOSFET with the following features: logic-level gate drive, avalanche rugged technology, rugged gate oxide technology, lower input capacitance, improved gate charge, extended safe operating area, lower leakage current, lower RDS(on).

This document details the characteristics of the IRLS640A MOSFET, including absolute maximum ratings, thermal resistance, electrical characteristics, etc.

MTD3055V is an N-channel enhancement mode field effect transistor from MTD company, with a maximum drain current of 300mA, a maximum gate-drain voltage of 20V, and a maximum operating temperature of 125℃.

This report provides an overview of the German Industry 4.0 framework and Germany's progress in implementing the framework. The German Industry 4.0 framework was published by the German Federal Ministry for Economic Affairs and Energy (BMWi) in December 2011. The framework consists of five main elements: digital infrastructure, connected factories, connected products, connected services, and connected value chains. The goal of the German Industry 4.0 framework is to achieve more intelligent and efficient manufacturing by connecting people, machines, and data.

MTP3055VL is a logic level N-channel MOSFET that is specifically designed for low voltage, high speed switching applications such as power supplies and power motor controls. It features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

NDP5060L/NDB5060L is a logic level N-Channel enhancement mode power field effect transistor produced by Fairchild using high cell density DMOS technology. It has extremely low Rdson, fast switching speed and the ability to withstand high energy pulses. It is suitable for low voltage applications.