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FDMA510PZ is a single P-channel PowerTrench® MOSFET with a maximum drain-source voltage of –20V, a maximum drain-source current of –7.8A and a maximum on-state resistance of 30mΩ. It features low power consumption, high withstand voltage, high switching speed and is suitable for battery charging or load switching applications.
This document describes the features and characteristics of the FDMA530PZ Single P-Channel PowerTrench® MOSFET, released in June 2011. This product is designed for battery charge or load switching in ultraportable applications. It features a MOSFET with low on-state resistance and exceptional thermal performance.
FDMA6023PZT is a dual P-Channel PowerTrench® MOSFET with a working voltage of -20V and a maximum on-state resistance of 60 mΩ. It is suitable for applications such as battery charge switch, battery management, and load switch.
This is a document about FDMA7628 Single N-Channel 1.5V Specified PowerTrench® MOSFET. The product features a maximum rDS(on) of 14.5 mΩ, a maximum voltage of 20V, a maximum current of 9.4A, and a maximum power dissipation of 1.9W. It is designed with a low profile of 2x2mm and is RoHS compliant.
FDMA7630 is a single N-channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation. It features a maximum voltage of 30V, a maximum current of 11A, and a maximum on-resistance of 13mΩ. The device is packaged in a MicroFET 2x2 mm package that is only 0.8mm thick and is RoHS compliant.
FDMA7632 is a N-channel power MOSFET from Fairchild Semiconductor. Its maximum drain-source voltage is 30V and maximum current is 9A. The typical on-resistance is 19mΩ at VGS = 10V, ID = 9A and 30mΩ at VGS = 4.5V, ID = 7A. The device is packaged in a new MicroFET 2x2 mm with a height of 0.8mm and is RoHS compliant.
This document describes the features and characteristics of the FDMA7670 single N-channel power MOSFET, including maximum on-resistance, low profile, etc. The product is suitable for DC-DC Buck converters.
This document describes the features and characteristics of the FDMA7672 Single N-Channel Power Trench MOSFET, including maximum on-resistance, low profile packaging, free from halogenated compounds and antimony oxides, etc.
FDMA8878 is a single N-channel high performance Power Trench MOSFET with extremely low RDS(on), fast switching speed and RoHS compliant. It is suitable for applications including DC/DC Buck converters, load switch in NB and notebook battery power management.
This document describes the features and characteristics of the FDMA8884 N-Channel Power Trench® MOSFET product released in April 2012, including maximum on-state resistance, high-performance trench technology, fast switching speed, etc.
FDMA905P is a single P-channel PowerTrench® MOSFET with a maximum RDS(on) of 16 mΩ, and is designed for use in battery charge or load switching applications in cellular handsets and other ultraportable devices.
This document describes the features and characteristics of FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET, including maximum on-resistance, low profile package, HBM ESD protection, etc. This product is designed specifically for Li-Ion battery pack protection circuit and other ultra-portable applications.
FDMB3800N is a dual N-channel power MOSFET produced by Fairchild Semiconductor Corporation. It features low on-state resistance, high switching speed, low gate charge, etc.
