Fairchild Manuals

This document describes the features and characteristics of FDMB3900AN Dual N-Channel Power Trench® MOSFETTM, including maximum resistance, switching speed, etc.

The FDMB668P is an excellent low-voltage P-channel MOSFET with low RDS(on) for portable applications. It achieves an optimal balance among efficiency, thermal transfer and small form by integrating a P-channel MOSFET with minimized on-state resistance into a MicroFET 3x1.9 package. When optimizing the dimension of portable applications, this little device offers a very efficient solution.

The FDMC15N06 is an N-channel MOSFET power device with a drain-to-source voltage of 55V, a drain current of 15A, and an on-resistance of 0.090Ω. This device is manufactured using the innovative UItraFET process, which achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. It is capable of withstanding high energy in avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. It is designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

FDMC2512SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM is a low on-resistance N-channel MOSFET that uses Fairchild Semiconductor's advanced PowerTrench® process. It has extremely low Junction-to-Ambient thermal resistance, extremely low rDS(on) and a high efficiency monolithic Schottky body diode.

FDD8451 N-Channel PowerTrench® MOSFET is a high performance N-channel MOSFET with low gate charge, fast switching speed and extremely low rDS(on). It can be used in DC/DC converter and backlight inverter applications.

FDD8453LZ is an N-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. The rated voltage is 40V and the maximum current is 50A. The maximum on-state resistance is 6.7mΩ.

This document provides the maximum ratings and thermal characteristics of the FDD850N10L N-Channel PowerTrench® MOSFET, as well as describes its features and characteristics.

FDD86102 N-Channel PowerTrench® MOSFET is a N-Channel MOSFET from Fairchild Semiconductor Corporation. Its maximum on-resistance is 24 mΩ, rated working voltage is 100 V, and rated working current is 36 A.

FDD86102LZ N-Channel PowerTrench® MOSFET is a high-performance MOSFET produced by Fairchild Semiconductor Corporation with a maximum on-state resistance of 22.5 mΩ. It is suitable for applications such as DC-DC conversion, inverters and synchronous rectifiers.

FDD86110 N-Channel PowerTrench® MOSFET is produced by Fairchild Semiconductor Corporation. It is a N-Channel MOSFET with a rated voltage of 100 V and a rated current of 50 A. The maximum on-state resistance is 10.2 mΩ, making it ideal for DC-DC conversion applications.

FDD86113LZ N-Channel PowerTrench® MOSFET is a high-performance MOSFET product with low on-state resistance, high power, and current handling capability. It is produced using advanced Power Trench® process.

FDD86250 N-Channel PowerTrench® MOSFET is produced by Fairchild Semiconductor Corporation. It is a N-channel MOSFET with a maximum on-state resistance of 22 mΩ and a rated voltage of 150 V. The maximum current is 50 A and it is used for DC - DC conversion.

FDD86252 N-Channel PowerTrench® MOSFET is a N-channel MOSFET produced by Fairchild Semiconductor Corporation. Its main features are low on-state resistance and superior switching performance.

This datasheet provides the parameters of FDD86326 N-Channel PowerTrench® MOSFET, including maximum voltage, maximum current, maximum resistance, etc.

FDD8770/FDU8770 N-Channel PowerTrench® MOSFET is a N-channel MOSFET produced by Fairchild Semiconductor Corporation. This MOSFET has low gate charge, low rDS(on) and fast switching speed, which is very suitable for DC/DC converters.