Fairchild Manuals

This product is a dual P-channel MOSFET with a maximum on-state resistance of 155mΩ, a maximum drain-source voltage of -20V, and a maximum drain current of -3.1A.

FDMA1027P is a dual P-Channel PowerTrench® MOSFET designed specifically for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

FDMA1027PT is a dual P-channel PowerTrench® MOSFET with a rated voltage of -20V and a rated current of -3A. This device is specially designed for battery charge switch applications in cellular handsets and other ultra-portable devices. It features low thermal resistance and bi-directional current flow.

This product is a dual N-channel power transistor designed specifically for dual switching requirements in cellular handsets and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

FDMA1029PZ is a dual P-channel power MOSFET from Fairchild Semiconductor Corporation with low on-state resistance and bidirectional current flow. It is suitable for battery charge switch in cellular handset and other ultra-portable applications.

FDMA1032CZ is a 20V Complementary PowerTrench MOSFET produced by Fairchild Semiconductor Corporation. It features low conduction losses and high frequency switching.

FDMA2002NZ is a dual N-Channel PowerTrench MOSFET with an operating voltage of 30V and an operating current of 2.9A. It features low on-state resistance and is suitable for dual switching requirements in cellular handsets and other ultra-portable applications.

FDMA291P is a P-Channel 1.8V PowerTrench MOSFET produced by Fairchild Semiconductor Corporation. It is mainly used for battery charging or load switching applications. It features low on-state resistance.

This document describes the features and characteristics of the FDMA3023PZ Dual P-Channel PowerTrench MOSFET, including maximum on-state resistance and low conduction losses.

FDMA3027PZ is a dual-channel power MOSFET with a maximum on-state resistance of 87 mΩ, a drain-source voltage of -30 V, and a drain current of -3.3 A. The device is packaged in MicroFET 2x2 mm, which offers exceptional thermal performance for its physical size and is well suited to linear mode applications. In addition, the device has HBM ESD protection.

FDMA3028N is a dual N-Channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation with a low on-state resistance of 68 mΩ. It also features a low profile 2x2mm package and high thermal performance.

FDMA410NZ is a single N-channel 1.5V PowerTrench® MOSFET from Fairchild Semiconductor Corporation with a maximum on-resistance of 23 mΩ, rated at 20V and 9.5A.

FDMA420NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET is a low on-resistance N-channel power MOSFET with low switching losses at 4.5 V and low on-resistance at 2.5 V. It is suitable for various applications such as lithium-ion battery packs.

This is a document about FDMA430NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET. The product has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe. It is suitable for applications such as Li-ion battery packs.

This document describes the features and characteristics of the FDMA507PZ P-channel PowerTrench® MOSFET, including a maximum rDS(on) of 24 mΩ, a low profile (0.8 mm maximum) MicroFET 2X2 mm package, and an HBM ESD protection level >3.2K V typical value.