Fairchild Manuals

English abstract: This document introduces the xxx brand xxx model product's features and characteristics, and conducts tests on it. The test results show that xxx product has xxx, xxx, xxx and other features, and is suitable for xxx scenarios.

This datasheet provides the features and characteristics of FQD3N50C / FQU3N50C 500V N-Channel MOSFET.

SSN1N45B is a 450V N-channel MOSFET produced by Fairchild Semiconductor Corporation. The device uses Fairchild's proprietary planar DMOS technology, which features low on-state resistance, superior switching performance, high energy pulse voltage tolerance, and dv/dt capability. It is well suited for half-bridge electronic ballasts.

Si4542DY is a 30V complementary PowerTrench MOSFET from Fairchild Semiconductor International. This device has low on-state resistance and low gate charge, and is suitable for DC/DC converters and power management applications.

Si4532DY* is a dual N- and P-channel enhancement mode field effect transistor with unique features and characteristics.

This document describes the features and characteristics of Fairchild Semiconductor's SI4435DY 30V P-Channel PowerTrench MOSFET, which is suitable for power management, load switch, and battery protection applications.

This is the official datasheet for Si3457DV. It is a single P-channel logic level PowerTrench MOSFET produced by Fairchild. It has been optimized for battery power management applications.

Si3443DV is a P-Channel 2.5V specified PowerTrench MOSFET. It has a drain-source voltage of -20V and a gate-source voltage of ±8V. The continuous drain current is -4A, and the pulsed drain current is -20A. The device has a maximum power dissipation of 1.6W. The operating and storage junction temperature range is -55 to +150°C.

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM are N-channel power MOSFETs manufactured by Fairchild Semiconductor Corporation. They have a feature of 70A, 60V, 0.014 Ohm. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.

This document describes the features and characteristics of the RFG50N06, RFP50N06, and RF1S50N06SM N-Channel power MOSFETs from Fairchild Semiconductor Corporation. These MOSFETs are manufactured using the MegaFET process and provide outstanding performance. They are designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.

RFP12N10L 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET is a N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers.

This is a 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs, produced by Fairchild Semiconductor Corporation.

RFD16N06LESM is a N-Channel power MOSFETs manufactured by Fairchild Semiconductor Corporation with 16A, 60V, 0.047 Ohm, Logic Level features.

RFD16N05, RFD16N05SM 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs are manufactured by Fairchild Semiconductor Corporation. It has features such as 16A, 50V, rDS(ON) = 0.047 Ω, Temperature Compensating PSPICE® Model, Peak Current vs Pulse Width Curve, UIS Rating Curve, 175oC Operating Temperature.

This document describes the features and characteristics of RFD16N05L and RFD16N05LSM, which are N-Channel logic level power MOSFET devices. It includes their power control, conductance, gate bias range, special gate oxide design, switching speed, etc.