Fairchild Manuals

FDG8850NZ is a dual N-channel logic level enhancement mode field effect transistor produced by Fairchild Semiconductor, using Fairchild's proprietary high cell density DMOS technology. It has a very low on-state resistance and is very suitable for use in 3V circuits.

FDP047AN08A0/FDI047AN08A0/FDH047AN08A0 is a N-channel power transistor from Fairchild Semiconductor Corporation. Its maximum drain-source voltage is 75V, maximum drain current is 80A, and maximum on-resistance is 4.7mΩ. This product has low Miller charge, low QRR body diode, UIS capability (single pulse and repetitive pulse) and other features. It can be used in 42V automotive load control, starter/alternator systems, electronic power steering systems, electronic valve train systems, DC-DC converters and off-line UPS, distributed power architectures and VRMs, primary switch for 24V and 48V systems.

FDH055N15A is a N-Channel MOSFET with a rated voltage of 150V and a maximum current of 167A.

The document introduces a Fairchild semiconductor product called FDH44N50. This product is an N-channel SMPS power MOSFET with features such as 44A continuous drain current, 500V drain-to-source voltage, and 0.12 Ohm on-resistance. It is suitable for various switch mode power supply applications, such as PFC Boost, Two-Switch Forward Converter, Single Switch Forward Converter, Flyback Converter, Buck Converter, and high-speed switching. The product features low gate charge Qg, improved gate, avalanche and high reapplied dv/dt ruggedness, reduced on-resistance, reduced Miller capacitance and low input capacitance, improved switching speed with low EMI, and a rated junction temperature of 175°C.

FDH45N50F_F133 is a 500V N-Channel MOSFET with RDS(on) of 0.12Ω (at VGS = 10V) and a low gate charge of 105 nC (typical).

The FDI030N06 is a N-channel power MOSFET produced by Fairchild Semiconductor Corporation. It features low RDS(on), fast switching speed and low gate charge.

FDP038AN06A0 / FDI038AN06A0 is a 60V, 80A, 3.8mΩ N-Channel PowerTrench® MOSFET. Its features include: rDS(ON) = 3.5mΩ (typical), VGS = 10V, ID = 80A; Qg(tot) = 95nC (typical), VGS = 10V; low Miller charge; low QRR body diode; UIS capability (single pulse and repetitive pulse).

This datasheet lists the features, maximum ratings, thermal characteristics and more information of FDI040N06 N-Channel PowerTrench® MOSFET.

FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor. Its maximum power dissipation is 263W, the switching speed is fast, the gate charge is low, and it uses high-performance trench technology. RDS(on) is extremely low, making it an ideal product for high power and large current handling

This document describes the features and characteristics of FDI150N10 N-Channel PowerTrench® MOSFET, including low RDS(on), fast switching speed, low gate charge, etc.

The FDL100N50F N-Channel MOSFET is Fairchild's proprietary product, which uses Fairchild's proprietary planar stripe DMOS technology, and has the characteristics of low on-state resistance, fast switching, high energy pulse, RoHS compliance, etc.

The FDM3622 N-Channel PowerTrench® MOSFET is a 100V, 4.4A, 60mΩ MOSFET with features including low Miller charge, low QRR, body diode, high frequency optimized efficiency, UIS capability (single pulse and repetitive pulse) and RoHS compliance.

FDMA1023PZ Dual P-Channel PowerTrench® MOSFET is a low-on-state-resistance device designed for battery charge switch applications in cellular handset and other ultra-portable applications.

FDMA1024NZ Dual N-Channel PowerTrench® MOSFET is a 20 V, 5.0 A, 54 mΩ dual N-Channel power MOSFET with low on-state resistance, low profile and high ESD protection, suitable for cellular handset and other ultra-portable applications