Fairchild Manuals

The HUF75852G3 is a N-Channel, UltraFET® Power MOSFET from Fairchild Semiconductor Corporation. It features ultra-low on-resistance (rDS(ON) = 0.016Ω, VGS = 10V), and provides simulation models, reliability information and more.

The HUF75842P3 and HUF75842S3S are 43A, 150V, 0.042 Ohm N-channel ultra low on-resistance Fairchild UltraFET power MOSFETs.

HUF75652G3 is a N-channel MOSFET produced by Fairchild Semiconductor Corporation. Its characteristic is low on-resistance, maximum voltage is 100V, and maximum current is 75A.

The HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 are N-channel UltraFET power MOSFETs manufactured by Fairchild Semiconductor. They have very low on-resistance, high switching speed, high current density, and high reliability. They are suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

HUF75631P3, HUF75631S3ST 33A, 100V, 0.040 Ohm, N-Channel, UltraFET® Power MOSFETs is a ultra low on-resistance power MOSFET from Fairchild Semiconductor Corporation.

This file is the datasheet of HUF75545P3, HUF75545S3, HUF75545S3S, introducing the features and characteristics of the products. For details, please refer to the original file.

This document describes the features and characteristics of Fairchild Semiconductor Corporation's HUF75542P3 and HUF75542S3S products, including ultra-low on-resistance, simulation models, peak current vs pulse width curve, etc.

HUF75345G3, HUF75345P3, HUF75345S3S 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs are manufactured by Fairchild Semiconductor Corporation. This device has high performance, low reverse recovery time and stored charge, and is suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs

This datasheet introduces the features and applications of HUF75339G3, HUF75339P3, HUF75339S3S 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs

This document introduces the HUF75332G3, HUF75332P3, and HUF75332S3S N-Channel UltraFET power MOSFETs manufactured by Fairchild Semiconductor Corporation. These devices are made using the innovative UltraFET process and offer the lowest possible on-resistance and outstanding performance. They are capable of withstanding high energy in the avalanche mode and have very low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

This document introduces HUF75329D3 and HUF75329D3S N-Channel UltraFET power MOSFETs, which are manufactured using the innovative UltraFET process and have low on-resistance and outstanding performance. This device is designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

HUF75321P3, HUF75321S3S 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs are manufactured by Fairchild Semiconductor Corporation. This product has a rated current and voltage of 35A and 55V. It uses the innovative UltraFET® process for manufacturing and achieves the lowest silicon area switch resistance, resulting in outstanding performance. This device can withstand high energy in the avalanche mode and the diode has a very low reverse recovery time and stored charge. It is designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

The HUF75321D3ST 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs are innovative N-Channel power MOSFETs manufactured by Fairchild Semiconductor Corporation, achieving the lowest possible on-resistance per silicon area, resulting in outstanding performance.

The QFET series is the company's latest generation of high performance, high reliability, high integration, low power consumption and high cost-effective automotive grade power electronic devices. The product line covers fast recovery diodes, Schottky diodes, rectifier bridges, power modules and IGBTs. QFET adopts advanced design technology and process, with excellent performance, reliability and high cost performance, widely used in automotive electronics, new energy vehicles, rail transit, industrial control, communications and other fields