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The FDD8778/FDU8778 N-Channel PowerTrench® MOSFET is a 25V, 35A, 14mΩ N-Channel MOSFET with low gate charge, low rDS(on) and fast switching speed, which is suitable for DC-DC converters, VRM and other applications.
FDD8780/FDU8780 N-Channel PowerTrench® MOSFET is a N-Channel MOSFET launched by Fairchild Semiconductor Corporation. This device has the features of low gate capacitance, low on-resistance and fast switching speed. It is applied to Vcore DC-DC for desktop computers and servers and VRM for intermediate bus architecture.
FDD8782/FDU8782 N-Channel PowerTrench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It has low gate charge, low rDS(on) and fast switching speed. It can be applied to Vcore DC-DC, VRM, etc.
FDD8796/FDU8796 N-Channel PowerTrench® MOSFET is a N-Channel MOSFET product of Fairchild Semiconductor Corporation. Its features are low gate charge, low rDS(on) and fast switching speed. It is applied to Vcore DC-DC and VRM.
This document describes the features and characteristics of the FDD8874 / FDU8874 N-Channel PowerTrench® MOSFET, which is designed to improve the efficiency of DC/DC converters.
The FDD8876 is a N-Channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation. It is rated at 30V and 73A, with a typical on-resistance of 8.2mΩ. It is suitable for use in DC/DC converters.
The FDD8880 is an N-channel PowerTrench® MOSFET with an operating voltage of 30V and an operating current of 58A. It has an RDS(ON) of 9mΩ and is suitable for DC/DC converters. It has low gate charge, low RDS(ON) and fast switching speed.
FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET is a low on-resistance, high current handling N-channel MOSFET, designed specifically for DC/DC converters.
This document describes the features and characteristics of FDD8N50NZ N-Channel MOSFET, including a drain-to-source voltage of 500V, a drain current of 6.5A, and an on-state resistance of 0.85Ω.
This document describes the features and characteristics of the FDG311N N-Channel MOSFET, which is produced using Fairchild Semiconductor's PowerTrench process. It has low on-state resistance and low gate charge, making it suitable for portable electronics applications.
FDG312P is a P-Channel MOSFET produced by Fairchild Semiconductor using the advanced PowerTrench process. It can achieve low on-state resistance and low gate charge, and is suitable for portable electronic applications.
FDG315N is a N-channel logic level MOSFET produced by Fairchild Semiconductor with a maximum voltage of 30V and a maximum current of 2A. This device has extremely low on-state resistance and is suitable for low voltage and battery-powered applications.
The document describes the features and characteristics of the FDG316P P-Channel Logic Level MOSFET product, which is produced using Fairchild Semiconductor's PowerTrench process. It has low on-state resistance and fast switching performance, making it suitable for low voltage and battery-powered applications.
