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This document describes the absolute maximum ratings and thermal characteristics of the NPN switching transistor BSV52. This device is designed for high-speed saturated switching at collector currents of 10mA to 100mA. It has a collector-emitter voltage of 12V, a collector-base voltage of 20V, and an emitter-base voltage of 5.0V. The maximum collector current is 200mA. The operating temperature range is -55 to +150°C.
The BSS64 is a NPN general purpose amplifier produced by Fairchild Semiconductor Corporation. Its features are a maximum collector-emitter voltage of 80V, a maximum collector-base voltage of 120V, a maximum emitter-base voltage of 5.0V, a maximum collector current of 200mA, and a working temperature range of -55 to +150 degrees C.
This is the datasheet of Fairchild BSS63 PNP General Purpose Amplifier, it is designed for general purpose amplifier and switch applications requiring high voltages.
The BSR18A is a PNP general purpose amplifier from FAIRCHILD. The maximum collector-emitter voltage is 40V, the collector-emitter breakdown voltage is 40V, the collector-base breakdown voltage is 40V, the emitter-base voltage is 5.0V, and the maximum collector current is 200mA. The maximum power consumption is 350mW.
This document describes the features of the BSR17A NPN general purpose amplifier and switch. It has a useful dynamic range of up to 100mA as a switch and up to 100MHz as an amplifier.
BSR16 is a PNP epitaxial silicon transistor designed for general purpose amplification and switching applications with collector currents up to 500mA. It offers stable performance and reliability for various applications.
The BSR15 is a PNP general purpose amplifier designed for use in amplifiers and switches requiring a maximum collector current of 500mA. Its main features include a collector-emitter voltage of -40V, a collector-base voltage of -60V, and an emitter-base voltage of -5.0V. The product is suitable for operating at temperatures ranging from -55°C to +150°C.
BCX70K is an NPN epitaxial silicon transistor with a collector-base voltage of 45V, an emitter-base voltage of 5V, a collector current of 200mA, and a collector power dissipation of 350mW. This transistor has high IC and hFE values, low saturation voltage and on voltage, as well as low noise figure and output capacitance.
The BCX70J is a general purpose NPN silicon transistor manufactured by Fairchild Semiconductor. Its maximum absolute ratings are VCBO=45V, VCEO=45V, VEBO=5V, IC=200mA, PC=350mW, TSTG=-55~150°C.
The BCX70H is a NPN transistor produced by Fairchild Semiconductor Corporation. Its maximum collector voltage is 45V, maximum collector-emitter voltage is 45V, maximum emitter-base voltage is 5V, maximum collector current is 200mA, and maximum collector power dissipation is 350mW. The storage temperature is -55 to 150 degrees Celsius.
BCX70G is an NPN silicon transistor produced by Fairchild Semiconductor. Its maximum collector-emitter reverse voltage is 45V, its maximum collector-base reverse voltage is 45V, its maximum emitter-base reverse voltage is 5V, its maximum collector current is 200mA, and its maximum collector power dissipation is 350mW. The storage temperature range is -55°C to 150°C.
