Fairchild Manuals

NDS351AN is a Fairchild Semiconductor N-Channel Logic Level MOSFET that is produced using PowerTrench technology, and has ultra-low on-resistance, ultra-low gate charge and ultra-small package.

The NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor is a low voltage application field effect transistor produced by Fairchild. The product has extremely low on-state resistance and is suitable for notebook computer power management, portable products and consumer electronics applications.

The NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor is a high density, DMOS technology product produced by Fairchild. This device has a very low RDS(ON) and is suitable for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching and low in-line power loss are needed in a very compact area.

NDS0610 P-Channel Enhancement Mode Field Effect Transistor is a voltage controlled small signal switch with low RON(on) and high saturation current.

NDS0605 is a Fairchild P-channel enhancement mode field effect transistor with low RDS(ON), high density, and high saturation current, which is suitable for low voltage low current applications.

This document introduces the absolute maximum ratings, product features, technical specifications of NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor.

This document introduces the features and characteristics of NDP6060/NDB6060.

This document introduces the dual P-Channel Enhancement Mode Power Field Effect Transistors produced by Fairchild Semiconductor Corporation. The product is produced using Fairchild's proprietary Trench Technology, which has a very high density and is designed to minimize on-state resistance, provide rugged and reliable performance, and fast switching speed. This product is particularly suitable for low voltage applications requiring a low current high side switch.

The BC369 is a PNP General Purpose Amplifier from Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 20V, maximum collector-base voltage is 25V, maximum emitter-base voltage is 5.0V, and maximum collector current is 1.5A. Its operating temperature range is -55 to +150℃.

This document is the user manual of NDP6060L/NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor.

This product is a P-channel logic level enhancement mode power field effect transistor with a rated current and voltage of -30 A and -30 V, extremely low RDS(ON) and a maximum junction temperature rating of 175°C.

These devices are particularly suited for low voltage applications such as automotive, industrial, communication, and computer applications.

NDP5060L/NDB5060L is a logic level N-Channel enhancement mode power field effect transistor produced by Fairchild using high cell density DMOS technology. It has extremely low Rdson, fast switching speed and the ability to withstand high energy pulses. It is suitable for low voltage applications.