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FQPF20N06L is a 60V Logic N-Channel MOSFET. It features 15.7A maximum current, 0.055Ω RDS(on) and low gate charge and is well suited for low voltage applications.
FQPF20N06 is a 60V N-Channel MOSFET produced using Fairchild's DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse withstand capability. It is suitable for low voltage applications such as automotive, DC/DC converters and high efficiency switching for power management in portable and battery operated products.
The FQPF19N10 is a 100V N-channel MOSFET that uses Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, high switching performance, and the ability to withstand high-energy pulses in avalanche and commutation mode. It is suitable for low-voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters, and DC motor control.
FQP15P12/FQPF15P12 is a P-channel MOSFET with a 120V voltage rating produced by Fairchild. It has low on-state resistance, high switching speed, and high energy pulse resistance. It is suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters and DC motor control.
This document describes the absolute maximum ratings and electrical characteristics of BC337/338 NPN epitaxial silicon transistors. The transistors are suitable for AF driver stages and low power output stages, and are complementary to BC327/BC328.
The NDS351N is Fairchild's N-Channel logic level enhancement mode power field effect transistor, using copper lead frame's proprietary package design, with superior thermal and electrical performance. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount package.
