FDP047AN08A0/FDI047AN08A0/FDH047AN08A0 is a N-channel power transistor from Fairchild Semiconductor Corporation. Its maximum drain-source voltage is 75V, maximum drain current is 80A, and maximum on-resistance is 4.7mΩ. This product has low Miller charge, low QRR body diode, UIS capability (single pulse and repetitive pulse) and other features. It can be used in 42V automotive load control, starter/alternator systems, electronic power steering systems, electronic valve train systems, DC-DC converters and off-line UPS, distributed power architectures and VRMs, primary switch for 24V and 48V systems.
This document is a datasheet for Fairchild Semiconductor's N-Channel PowerTrench MOSFETs, specifically models FDP047AN08A0, FDI047AN08A0, and FDH047AN08A0. The devices are rated for 75V, 80A, and 4.7mΩ on-resistance and are qualified to AEC Q101 for automotive applications. They are available in TO-220AB, TO-262AB, and TO-247 packages.
| Drain to Source Voltage | 75 V |
|---|---|
| Gate to Source Voltage | 420 Vv |
| Continuous Drain Current | 80 A |
| Power dissipation | 310 Ww |
| Operating and Storage Temperature | -55 to 175 °C |
| Thermal Resistance Junction to Case | 0.48 °C/W |
The device is rated for operation and storage between -55°C and 175°C.