FDG8850NZ is a dual N-channel logic level enhancement mode field effect transistor produced by Fairchild Semiconductor, using Fairchild's proprietary high cell density DMOS technology. It has a very low on-state resistance and is very suitable for use in 3V circuits.
The FDG8850NZ is a dual N-Channel logic level enhancement mode field effect transistor produced using Fairchild's proprietary high cell density DMOS technology. It is designed for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs, operating in 3V circuits with very low gate drive requirements. The device is RoHS compliant and comes in a SC70-6 package.
| Drain to Source Voltage | 30 V |
|---|---|
| Gate to Source Voltage | +12 V |
| Continuous Drain Current | 0.75 A |
| Pulsed Drain Current | 2.2 A |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Package Type | SC70-6 |
The maximum drain to source voltage is 30 V.
Yes, the device is RoHS compliant.
The continuous drain current rating is 0.75 A.