Fairchild Semiconductor FDMA1024NZ Dual N-Channel PowerTrench MOSFET Datasheet

FDMA1024NZ Dual N-Channel PowerTrench® MOSFET is a 20 V, 5.0 A, 54 mΩ dual N-Channel power MOSFET with low on-state resistance, low profile and high ESD protection, suitable for cellular handset and other ultra-portable applications


Fairchild Semiconductor FDMA1024NZ Dual N-Channel PowerTrench MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
402 KB
Published
11 July, 2012
Updated
30 September, 2023
MD5 checksum
9D1E2DF212F9C7194129D73A7E53B412

About this manual

The FDMA1024NZ is a dual N-Channel MOSFET designed specifically as a single package solution for dual switching requirements in cellular handsets and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance to minimize conduction losses.

The device is housed in a MicroFET 2x2 package, offering exceptional thermal performance for its physical size and a low profile of 0.8 mm maximum. It is RoHS compliant and free from halogenated compounds and antimony oxides.

What's inside

  • General Description
  • Applications
  • Maximum Ratings
  • Electrical Characteristics
  • Thermal Characteristics
  • Package Marking and Ordering Information
  • Typical Characteristics
  • Dimensional Outline and Pad Layout

Specifications

Package TypeMicroFET 2x2

Frequently asked questions

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is 5.0 A.

What is the maximum power dissipation for single operation?

The maximum power dissipation is 1.4 W for single operation.

What is the maximum profile height of the package?

The maximum profile height is 0.8 mm.

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