Fairchild Manuals

FQPF70N10 is a 100V N-channel MOSFET from Fairchild that uses Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse handling capability. This device is well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

FQPF6N80T is a 800V N-channel MOSFET from Fairchild with a maximum continuous current of 3.3A and a 1.95 ohm on-state resistance, low gate charge and fast switching characteristics.

This file introduces the structure and working principle of QFET.

The FQPF5P20 is a 200V P-channel MOSFET with low gate charge, low Crss, fast switching and 100% avalanche tested.

FQPF5N90 is a 900V N-channel MOSFET with features like low on-resistance, fast switching, 100% avalanche tested, improved dv/dt capability.

QFET is a new type of power switch device developed by ON Semiconductor. It has the advantages of small size, large power, fast switching speed, and low switching loss. QFET is suitable for various power applications, such as switch power supplies, motor drives, LED drives, etc.

This datasheet provides absolute maximum ratings, thermal characteristics, drain-source voltage, drain-source current, gate-source voltage, single pulsed avalanche energy, avalanche current, repetitive avalanche energy, peak diode recovery dv/dt, power dissipation, operating and storage temperature for FQPF47P06.

FQPF33N10L 100V LOGIC N-Channel MOSFET is a product produced by Fairchild Semiconductor. It uses Fairchild's proprietary planar stripe DMOS technology, which has the advantages of low on-state resistance, superior switching performance, high energy pulse tolerance, etc. This product is suitable for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.

FQPF33N10 is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, superior switching performance and high energy pulse withstandability. It is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.

FQPF30N06L is a 60V logic N-channel MOSFET produced by Fairchild Semiconductor Corporation. Its features include low on-state resistance, superior switching performance, high energy pulse endurance and low gate charge and Crss. This device is well suited for low voltage applications such as automotive, DC/DC converters and high efficiency switching for power management in portable and battery operated products.

FQPF2N80 is a 800V N-channel MOSFET produced by Fairchild. Its features are: 1.5A, 800V, RDS(on) = 6.3Ω @VGS = 10 V, low gate charge (typical 12 nC), low Crss (typical 5.5 pF), fast switching, 100% avalanche tested, improved dv/dt capability.

This document describes the features and characteristics of the FQPF2N70 QFET TM FQPF2N70 700V N-Channel MOSFET, including low on-state resistance, superior switching performance, and ability to withstand high energy pulse in the avalanche and commutation mode. Suitable for high efficiency switch mode power supply.

The FQPF27P06 is a 60V P-channel MOSFET that features low gate charge, low Crss, and fast switching. It is well-suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

This white paper is published by QFET company, introducing the features and characteristics of QFET products.

FQPF22P10 is a 100V P-Channel MOSFET manufactured by Fairchild with low on-state resistance, superior switching performance, high energy pulse withstand capability, low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.