The FDM3622 N-Channel PowerTrench® MOSFET is a 100V, 4.4A, 60mΩ MOSFET with features including low Miller charge, low QRR, body diode, high frequency optimized efficiency, UIS capability (single pulse and repetitive pulse) and RoHS compliance.
This document is a datasheet for the Fairchild Semiconductor FDM3622, an N-Channel PowerTrench MOSFET. The device is designed to minimize on-state resistance while maintaining low gate charge for superior switching performance. It is optimized for applications such as distributed power architectures, VRMs, and high-voltage synchronous rectifiers.
| Operating Junction Temperature Range | -55 to +150 °C |
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The device supports a maximum continuous drain current of 4.4 A.
The device operates safely between -55°C and +150°C.
The maximum power dissipation is rated at 21 W.