FDH45N50F_F133 is a 500V N-Channel MOSFET with RDS(on) of 0.12Ω (at VGS = 10V) and a low gate charge of 105 nC (typical).
This document is a datasheet for the FDH45N50F_F133, a 500V N-Channel enhancement mode power field effect transistor (FRFET) produced using Fairchild's proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance, making it well-suited for high-efficient switched mode power supplies and active power factor correction applications.
The datasheet provides comprehensive technical data including absolute maximum ratings, electrical characteristics, and typical performance characteristics. Key specifications include a drain-source voltage of 500V, a continuous drain current of 45A at 25°C, and a low gate charge of typically 105 nC. The document also details thermal characteristics, mechanical dimensions for the TO-247AB package, and typical performance graphs regarding on-resistance, capacitance, and switching losses.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 45 A |
| Continuous Drain Current (Tg = 100°C) | 28.4 A |
| Pulsed Drain Current | 180 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 1868 mJ |
| Power Dissipation (Tg = 25°C) | 625 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Gate Threshold Voltage | 3.0 - 5.0 V |
The typical gate charge is 105 nC.
The maximum continuous drain current at 25°C is 45 A.
The maximum drain-source voltage is 500 V.