The FDL100N50F N-Channel MOSFET is Fairchild's proprietary product, which uses Fairchild's proprietary planar stripe DMOS technology, and has the characteristics of low on-state resistance, fast switching, high energy pulse, RoHS compliance, etc.
This document is a technical datasheet for the Fairchild Semiconductor Corporation FDL100N50F, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology designed to minimize on-state resistance and provide superior switching performance.
Key specifications include a drain-to-source voltage rating of 500V, a continuous drain current of 100A at 25°C, and an on-resistance (RDS(on)) of 0.043Ω typical at VGS=10V. The datasheet provides detailed electrical characteristics, thermal data, maximum ratings, and typical performance graphs for capacitance, gate charge, and safe operating areas.
| Drain to Source Voltage (VDSS) | 500 V |
|---|---|
| Gate to Source Voltage (VGSS) | ±30 V |
| Continuous Drain Current at 25°C | 100 A |
| On-Resistance (Typical) | 0.043 Ω |
| Total Gate Charge (Typical) | 238 nC |
| Reverse Transfer Capacitance (Typical) | 64 pF |
| Operating Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 100 A when the case temperature is 25°C.
The maximum drain-to-source voltage rating is 500 V.
The maximum junction temperature for operation is 150°C.