FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor. Its maximum power dissipation is 263W, the switching speed is fast, the gate charge is low, and it uses high-performance trench technology. RDS(on) is extremely low, making it an ideal product for high power and large current handling
The document provides a comprehensive overview of the FDP045N10A and FDI045N10A N-Channel PowerTrench MOSFETs manufactured by Fairchild Semiconductor. These devices feature a 100V drain-to-source voltage rating, a continuous drain current capability up to 164A (silicon limited), and an extremely low on-state resistance of 3.8mΩ typical at Vgs=10V and Id=100A.
Key applications identified include DC to DC converters, synchronous rectification for telecommunication power supplies, battery chargers, AC motor drives, and uninterruptible power supplies (UPS). The datasheet includes detailed electrical characteristics such as input/output capacitance, gate charge, switching times, and reverse recovery parameters. It also specifies thermal resistance values and provides maximum safe operating area graphs.
| Drain to Source Voltage (Vdss) | 100 V |
|---|---|
| On-State Resistance (Typical) | 3.8 mΩ |
| Power Dissipation (Tc = 25°C) | 268 W |
| Operating and Storage Temperature Range | -55 to +175 °C |
| Thermal Resistance (Junction to Case) | 0.57 °C/W |
The device is suitable for DC to DC converters, synchronous rectification for telecommunication PSU, battery chargers, AC motor drives, and offline UPS.
The silicon-limited continuous drain current at Tj = 25°C is 164 A.
Yes, the document lists RoHS Compliant as a feature of the device.