This document describes the features and characteristics of FDI150N10 N-Channel PowerTrench® MOSFET, including low RDS(on), fast switching speed, low gate charge, etc.
This document is a datasheet for the Fairchild Semiconductor FDI150N10, an N-Channel PowerTrench MOSFET. The device is designed for applications requiring high performance and low on-state resistance, such as DC to DC converters and synchronous rectification. It operates within a temperature range of -55 to +150 °C.
| Package Type | TO-262 |
|---|
The device supports a continuous drain current of 57 A when the junction temperature is 25°C.
The component is rated for an operating and storage temperature range from -55 to +150 °C.
The maximum power dissipation is 110 W when the case temperature is 25°C.