Fairchild Manuals

FQT1N80TF_WS is an N-channel enhancement mode power field effect transistor produced by Fairchild. This product uses Fairchild's proprietary planar stripe DMOS technology and has low on-state resistance, superior switching performance, high energy pulse bearing capability and improved dv/dt capability. It is suitable for high efficient switched mode power supplies and active power factor correction.

This datasheet provides the characteristics and parameters of FQT1N60C N-Channel MOSFET. The product is manufactured by Fairchild and is a 600V, 0.2A N-channel enhancement mode power field-effect transistor. The product has a low on-state resistance of 9.3 ohms, 4.8nC of low gate charge and 3.5pF of low Crss. It also has fast switching, 100% avalanche testing and improved dv/dt capability. The product is RoHS compliant and is suitable for high efficient switched mode power supplies and active power factor correction.

FQT13N06L is a 60V logic N-channel MOSFET produced by Fairchild. It has low gate charge, low reverse capacitance, high switching speed, and improved dv/dt capability.

FQT13N06 60V N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. This device uses Fairchild's proprietary planar stripe DMOS technology, which has low on-state resistance, superior switching performance and high energy pulse endurance, making it ideal for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery operated products.

This document is about QFET. QFET is a new type of semiconductor device that has high efficiency, low power consumption and high reliability. QFET has a wide range of applications, including power electronics, communications, medical and other fields.

This document describes the features and characteristics of QFET products

FQPF9P25 is a 250V P-channel MOSFET produced by Fairchild. It features low RDS(on), low gate charge, low Crss, and fast switching.

This document describes the features and characteristics of the FQPF9N50CF 500V N-Channel MOSFET product.

This datasheet provides the feature parameters of FQP9N25C/FQPF9N25C, including rated voltage, continuous current, switching frequency, gate voltage and on-state resistance.

This document is the product manual of FQPF8N60CF 600V N-Channel MOSFET. It introduces the features and characteristics of the product, including current, voltage, switching speed, etc.

FQP8N60C/FQPF8N60C is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse resistance in avalanche and commutation mode. This device is suitable for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FQPF85N06 is a 60V N-Channel MOSFET produced by Fairchild. It has a maximum output current of 53A, a switch resistance of 0.010Ω, a gate charge of 86 nC and a parasitic capacitance of 165 pF, which is suitable for low voltage applications such as automotive, DC/DC converters and high efficiency switching for power management in portable and battery operated products.

QFET QFET QFET QFET is a lead-free solder wire alternative that has high performance, low cost, easy to process and environmentally friendly features.

The FQP7N65C/FQPF7N65C is a N-channel enhancement mode power field effect transistor produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology, which has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

This document introduces an N-channel enhancement mode power field effect transistor produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in avalanche and commutation mode. It is suitable for high efficiency switch mode power supplies.