Fairchild Manuals

FDS8876 N-Channel PowerTrench® MOSFET is a low gate charge and low on-resistance power MOSFET designed specifically for DC/DC converters.

This document describes the features and characteristics of the FDS8870 N-Channel PowerTrench® MOSFET, including low rDS(on), low gate charge, high power and current handling capability.

FDS8858CZ is a dual N and P-channel enhancement mode power MOSFET produced by Fairchild Semiconductor Corporation. It features low on-state resistance and fast switching speed, and is well suited for low voltage and battery powered applications such as inverters and synchronous buck MOSFETs.

The FDS8984 is a N-channel MOSFET manufactured by Fairchild Semiconductor Corporation. It features low gate charge, low ON-resistance and fast switching speed.

The FDS9400A is a 30V P-Channel PowerTrench MOSFET from Fairchild Semiconductor Corporation. It has low gate charge (2.4nC typical), fast switching speed, high performance trench technology and extremely low RDS(ON) and is suitable for power management, load switch and battery protection applications.

FDS9431A is a Fairchild P-channel MOSFET with -3.5A, -20V maximum voltage and current, low RDS(ON) and high power handling capability.

FDS9435A is a 30V P-Channel PowerTrench MOSFET optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

FDS9926A is a N-channel 2.5V specified MOSFET from Fairchild Semiconductor. It has a rated current and voltage of 6.5A and 20V, respectively, and is suitable for battery protection, load switching, and power management applications.

FDS9933A is a dual P-channel 2.5V MOSFET from Fairchild Semiconductor with extremely low RDS(on) and fast switching speed.

FDS9933BZ is a dual P-channel 2.5V specified PowerTrench® MOSFET, with low RDS(on), low gate charge, high performance trench technology and HBM ESD protection

The FDS9934C is a dual N- and P-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation using Fairchild Semiconductor Corporation's advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FDS9945 60V N-Channel PowerTrench MOSFET is a N-channel logic-level MOSFET designed by Fairchild Semiconductor Corporation. It features faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications, and it is optimized for use in switching DC/DC converters with PWM controllers.

This document describes Fairchild Semiconductor's FDS9953A Dual 30V P-Channel PowerTrench MOSFET. The product is optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V - 25V), and it is suitable for power management, load switch, and battery protection applications. Its features include low gate charge, fast switching speed, extremely low RDS(ON), and high power and current handling capability.

This document describes the features and characteristics of the FDS9958 Dual P-Channel PowerTrench® MOSFET, including maximum on-state resistance, low gate charge, and suitability for portable electronics applications.

The FDT3612 is a 100V N-channel MOSFET that utilizes high performance trench technology to achieve extremely low RDS(ON). This results in a MOSFET that has fast switching speed and low gate charge, making it ideal for use in DC/DC converters and motor driving applications.