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FDV304P Digital FET P-Channel is an extremely low ON-resistance device with excellent switching speed which can be directly operated on 3V power supply. This device has very high cell density that is tailored to minimize ON-state resistance at low gate drive conditions. This device is specially designed for battery-powered applications such as notebook computers and cellular phones.
2N7000BU/2N7000TA is a N-channel small signal MOSFET with fast switching times, improved inductive ruggedness, lower input capacitance, extended safe operating area and improved high temperature reliability.
This document details the characteristics of FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET, including applications, features, absolute maximum ratings, electrical characteristics, etc.
The FDV305N is a 20V N-Channel MOSFET produced by Fairchild Semiconductor Corporation. The product has been optimized for power management applications. Its features are low RDS(ON), low gate charge, and fast switching speed.
FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET, this product has a maximum resistance of 0.5 ohms and can be used for lithium-ion battery packs.
This document introduces the FDY2000PZ Dual P-Channel MOSFET product released by Fairchild Semiconductor in January 2006. This product is designed using the advanced Power Trench process to optimize the RDS(ON) value at VGS = -2.5V. It is suitable for Li-Ion battery packs, with a rated parameter of -350mA, -20V. It also features an ESD protection diode and is RoHS compliant.
This is the datasheet of FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET from Fairchild Semiconductor Corporation. It features 600 mA, 20 V RDS(ON) = 700 m��@ VGS = 4.5 V RDS(ON) = 850 m� @ VGS = 2.5 V, ESD protection diode and RoHS compliance.
The FDY300NZ is a N-channel MOSFET from Fairchild Semiconductor that features a very low RDS(ON) @ VGS = 2.5v and is suitable for use in Li-Ion battery packs and other applications.
This document describes the features and characteristics of the FDY301NZ single-channel MOSFET. It is designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V. Its applications include Li-Ion battery packs. The main features include a current of 200mA, 20V and a resistance of 5Ω @ VGS = 4.5V, 7Ω @ VGS = 2.5V. In addition, it also has an ESD protection diode and is RoHS compliant.
FDY4000CZ is a N-P channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. It has a low resistance characteristic and is suitable for power supply conversion circuits, load/power switching and other applications.
This document describes the features and characteristics of the FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET, including maximum on-resistance, small PCB footprint, ultra-thin package, high power and current handling capability, etc.
FDZ191P P-Channel 1.5V PowerTrench® WL-CSP MOSFET features a maximum RDS(on) of 85 mΩ, occupies only 1.5 mm2 of PCB area, is less than 0.65 mm in height when mounted to PCB, and is RoHS compliant. It is ideal for battery management, load switch, and battery protection applications.
