Fairchild Manuals

FDS8817NZ N-Channel PowerTrench® MOSFET is an N-channel MOSFET produced by Fairchild Semiconductor. It has a maximum rDS(on) of 7mΩ at VGS = 10V, ID = 15A. This device has extremely low rDS(on), high power and current handling capability, and complies with RoHS standards.

The FDS8840NZ is an N-channel power trench MOSFET with features including a maximum rDS(on) of 4.5 mΩ, a maximum rDS(on) of 6.0 mΩ, and HBM ESD protection.

This document describes the features and characteristics of the FDS2572 N-Channel MOSFET device, including optimized Rds(on), low ESR, low total and Miller gate charge, suitable for high frequency DC to DC converter applications.

The FDS2582 is a N-Channel PowerTrench® MOSFET manufactured by Fairchild Semiconductor Corporation. Its features are rDS(ON) = 57mΩ (Typ.), VGS = 10V, ID = 4.1A, Qg(tot) = 19nC (Typ.), VGS = 10V. It is suitable for DC/DC converters and Off-Line UPS, distributed power architectures and VRMs, primary switch for 24V and 48V systems, high voltage synchronous rectifier, direct injection / diesel injection systems, 42V automotive load control and electronic valve train systems.

This is a document about the FDS2670 200V N-Channel PowerTrench MOSFET. This MOSFET features high performance trench technology, with low RDS(ON), low gate charge, fast switching speed, and high power handling capability. It is specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. By using this MOSFET, higher driving safety and efficiency can be achieved in DC/DC power supply designs.

This document provides the maximum ratings and thermal characteristics of the FDS2672 N-Channel UltraFET Trench® MOSFET, as well as its features and application.

FDS2734 is a single N-Channel MOSFET produced by Fairchild Semiconductor. The device features extremely low on-state resistance and high switching speed, and is suitable for DC-DC conversion applications.

FDS3512 is an N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It features faster switching speed and lower gate charge, which makes it easier and safer to drive even at very high frequencies. This results in higher overall efficiency for DC/DC power supply designs.

FDS3572 is an N-channel power MOSFET with a working voltage of 80V, maximum current of 8.9A, and resistance of 16mΩ. The product features low Miller charge, low QRR body diode, optimized efficiency at high frequencies, and UIS capability.

FDS3580 is a 80V N-Channel PowerTrench MOSFET from Fairchild Semiconductor International. This device features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications, making it ideal for use in synchronous or conventional switching PWM controllers in DC/DC power supplies.

FDS3590 80V N-Channel PowerTrench® MOSFET is a high performance transistor, it features faster switching speed and lower gate charge, which can improve DC/DC converter's overall efficiency.

FDS3672 is a 100V, 7.5A, 22mΩ N-Channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation.

FDS3692 is a high-voltage N-channel MOSFET produced by Fairchild Semiconductor Corporation. Its features are low RDS(ON), low Qg(tot), low QRR, excellent high-frequency efficiency, and UIS capability. The product is suitable for DC/DC converters, Off-Line UPS, distributed power architectures and VRMs, 24V and 48V systems primary switch, high voltage synchronous rectifier, direct injection/diesel injection systems, 42V automotive load control, and electronic valve train systems.

This document describes the features and characteristics of the FDS3890 80V N-Channel Dual PowerTrench MOSFET. It is designed for DC/DC converters and offers faster switching speed and lower gate charge, resulting in higher power conversion efficiency.

FDS3992 is a dual-channel power MOSFET with a voltage rating of 100V, a current rating of 4.5A, and an ON-resistance of 62mΩ. It features low Miller charge, low QRR body diode, and optimized efficiency at high frequencies. Additionally, it has UIS capability and is suitable for applications such as DC/DC converters, off-line UPS, distributed power architectures, VRMs, primary switches for 24V and 48V systems, high voltage synchronous rectifiers, direct injection/diesel injection systems, 42V automotive load control, and electronic valve train systems.